1) SOI CMOS circuit
SOI CMOS电路
1.
New auto－bulk－biased multi－threshold SOI CMOS circuit operating at high temperature;
一种自动体偏置多阈值电压高温SOI CMOS电路
2) CMOS/SOI circuits
CMOS/SOI电路
4) CMOS/SOI materials
CMOS/SOI材料
1.
CMOS/SOI materials are prepared by injecting 170 keV F+ into SiO2 burying layers or Si/SiO2 interface of SIMOX material.
向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。
5) Silicon on insulator
SOI
1.
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.
采用线锥形结构 ,在 silicon- on- insulator(SOI)材料上设计并实现了一种新的紧缩型 3- d B多模干涉耦合器(MMI) 。
2.
A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.
根据区域调制多模干涉耦合器光开关的工作原理 ,以 2× 2区域调制多模干涉光开关为基础 ,采用级联的方式设计了 4× 4区域调制多模干涉SOI光波导开关。
3.
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.
绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。
6) fully depleted CMOS/SOI technology
全耗尽CMOS/SOI工艺
补充资料：CMOS电路
见互补金属-氧化物-半导体集成电路。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条