1.
Simulation and Optimization of FD SOI CMOS Devices at High Temperatures;
薄膜全耗尽SOI CMOS电路高温特性模拟和结构优化
2.
Simulation and Experiment of Radiation Effect of CMOS/SOI Devices and Circuits;
CMOS/SOI器件和电路的电离辐射效应模拟及实验
3.
Parameter Model Extraction of 0.8 Micron CMOS/SOI Technology
0.8μm CMOS/SOI模型参数提取
4.
Research on a SOI CMOS Electronic Pulse Measure Circuit of Time Interval with Good Anti-Radiation;
一种高抗辐射SOI CMOS电脉冲时间间隔测定电路的研究
5.
The High Temperature Application Research of Deep Sub Micron SOI CMOS Circuits;
深亚微米全耗尽SOI CMOS的高温应用分析
6.
Characteristic Research on SOI CMOS with Strained SiGe Channel;
应变SiGe沟道SOI CMOS的特性研究
7.
0.8μm SOI/CMOS SPICE Device Model Parameter Extraction;
0.8μm SOI/CMOS SPICE器件模型参数提取
8.
Research on 0.35μm SOI CMOS Device Modeling
0.35μm SOI CMOS器件建模技术研究
9.
Study on the Crosswise Multi-Gate SOI MOS and Its Application in Circuits;
横向多栅极SOI MOS的研究及电路应用
10.
Investigation into Low Insertion-Loss & High Isolation SOI RF Switch
低插入损耗高隔离度SOI射频开关电路的研究
11.
High Voltage PDP Data Driver IC Based on Thin Layer SOI
基于薄膜SOI的PDP高压寻址驱动集成电路
12.
2-D Current Model of Fully Depleted SOI BJMOSFET
深亚微米全耗尽SOI BJMOSFET的二维电流模型
13.
SOI-based Cell Electrofusion Chip
基于SOI基底的高通量细胞电融合芯片
14.
Analysis of Threshold Voltage Decreasing for Single-Gate and Double-Gate SOI MOSFET
短沟道SOI中的阈值电压下降问题的研究
15.
SOI Lateral High Voltage Device and Its Breakdown Voltage Model Based on the Enhanced Dielectric Electric Field Principle;
基于介质电场增强理论的SOI横向高压器件与耐压模型
16.
Design of 30V，2.4GHz SOI-LDMOS;
30V，2.4GHz SOI-LDMOS 设计
17.
Research on 200 V High Voltage SOI PLDMOS
200V高压SOI PLDMOS研究
18.
Study on SOI RESURF Principle and Fabrication of SOI LDMOS;
SOI RESURF原理研究及SOI LDMOS研制