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1)  sputtering post annealing reaction technique
溅射后退火反应法
1.
High quality GaN films are prepared by sputtering post annealing reaction technique on GaAs (110) substrates.
报道了用溅射后退火反应法在 Ga As (110 )衬底上制备 Ga N薄膜 。
2)  RF reaction sputtering
射频反应溅射法
1.
Gas sensing characteristics of SnO_(2-x) films deposited by RF reaction sputtering
射频反应溅射法制备SnO_(2-x)纳米薄膜的气敏特性研究
3)  reactive magnetron sputtering method
反应磁控溅射法
1.
In the text, the tungsten oxide films were prepared with sol-gel and reactive magnetron sputtering methods.
本文采用反应磁控溅射法和溶胶凝胶法制备了均匀致密的三氧化钨薄膜材料,对它的光学性质、表面形态、结构等进行了深入的研究。
4)  reactive cosputtering
反应共溅射法
1.
We have fabricated the polycrystalline NixFe3–xO4 films and epitaxial NiFe_2O_4 films by reactive cosputtering Fe(DC) and Ni(DC) targets, and their structure, magnetic and transport properties were studied systematically.
本论文用直流反应共溅射法制备了NixFe3–xO4多晶薄膜和NiFe_2O_4外延薄膜,并对它们的结构、磁学性质和输运特性进行了系统研究。
5)  Reactive sputtering
反应溅射
1.
Microstructure and mechanical properties of Ti-Al-Si-N nanocrystalline composite films prepared by the reactive sputtering method;
反应溅射Ti-Al-Si-N纳米晶复合薄膜的微结构与力学性能
2.
Microstructure and mechanical properties of(Al,Ti)(O,N) coatings synthesized by reactive sputtering;
反应溅射(Al,Ti)(O,N)涂层的微结构与力学性能
3.
On-line continuous deposition of SiO_2 by medium frequency reactive sputtering and ITO by direct current sputtering;
中频反应溅射SiO_2膜与直流溅射ITO膜的在线联镀
6)  Reactive magnetron sputtering
反应溅射
补充资料:软化退火(见低温退火)


软化退火(见低温退火)
soft-annealing

rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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