1) reactive co-sputtering
共反应溅射
1.
A new gate dielectric material,HfTiON,is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by anneal in N2 at 600 °C and 800 °C respectively for 2 mins.
在N2/O2气氛中,使用Ti、Hf靶共反应溅射在衬底Si上淀积一种新型栅介质材料HfTiON,随后分别在N2气氛中600°C和800°C退火2min。
2) RF reactive co-sputtering
射频反应共溅射
1.
Indium-doped zinc oxide films of various contents of In were deposited on silicon substrates by RF reactive co-sputtering.
通过射频反应共溅射法在硅衬底上制备了不同In掺杂量的ZnO薄膜,表征了薄膜的结构和表面形貌,研究了In掺杂量对znO薄膜的结构特性的影响。
3) DC reactive co-sputtering
直流反应共溅射
5) reactive cosputtering
反应共溅射法
1.
We have fabricated the polycrystalline NixFe3–xO4 films and epitaxial NiFe_2O_4 films by reactive cosputtering Fe(DC) and Ni(DC) targets, and their structure, magnetic and transport properties were studied systematically.
本论文用直流反应共溅射法制备了NixFe3–xO4多晶薄膜和NiFe_2O_4外延薄膜,并对它们的结构、磁学性质和输运特性进行了系统研究。
6) Reactive sputtering
反应溅射
1.
Microstructure and mechanical properties of Ti-Al-Si-N nanocrystalline composite films prepared by the reactive sputtering method;
反应溅射Ti-Al-Si-N纳米晶复合薄膜的微结构与力学性能
2.
Microstructure and mechanical properties of(Al,Ti)(O,N) coatings synthesized by reactive sputtering;
反应溅射(Al,Ti)(O,N)涂层的微结构与力学性能
3.
On-line continuous deposition of SiO_2 by medium frequency reactive sputtering and ITO by direct current sputtering;
中频反应溅射SiO_2膜与直流溅射ITO膜的在线联镀
补充资料：三级反应溅射
分子式：
分子量：
CAS号：
性质：见阴极溅射。
分子量：
CAS号：
性质：见阴极溅射。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条