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1)  photoresist exposure
抗蚀剂曝光
1.
The simulation of the photoresist exposure and that of aerial images of photolithography systems are tightly correlated with each other.
抗蚀剂曝光的模拟与光刻系统空间像模拟紧密相连 ,一般是用标量衍射方法在特殊几何形状的光源分布和特殊掩摸结构的条件下计算的 ,实质是一定边界条件和初始条件下 Maxwell方程组的求解。
2.
The calculating result to photoresist exposure indicates the computing technique is feasible.
抗蚀剂曝光的计算结果表明这种技术是有效的 。
2)  Thick resist exposure model
厚层抗蚀剂曝光模型
3)  photoresis
光抗蚀剂
4)  Photoresists
光致抗蚀剂
1.
The importance of photoresists in microelectronic industry is described in this review,emphasizing the characteristics of polysilane photoresists and the developing situation of ultra violet, deep ultraviolet, X-ray,electron-beam polysilane photoresists etc.
概述了光致抗蚀剂在微电子工业中的作用,着重介绍了聚硅烷光致抗蚀剂的特点,以及聚硅烷紫外、深紫外、X射线、电子未等抗蚀剂的发展状
2.
Polysilynes, a new kind of high-performance materials, are reviewed on the present investigation of their synthesis, structure, reactions and applications as semiconductors, conductive SiC thin films, optical waveguides and photoresists.
本文综述了一类新型的高功能材料——聚硅炔的合成、结构、反应以及作为半导体、导电性SiC薄膜、光学波导器和光致抗蚀剂的应用的研究现状。
5)  photoresist [,fəutəuri'zist]
光致抗蚀剂
1.
Preparation of Cresol-formaldehyde Resins Used for Making Positive Photoresist;
正性光致抗蚀剂用酚醛树脂的制备
2.
Research progress and application status of UV positive photoresist;
紫外正性光致抗蚀剂的研究进展及应用现状
3.
Experiments on two-photon Optical storage in photoresist;
以光致抗蚀剂为记录介质的双光子存储实验
6)  positive photoresist
正型光致抗蚀剂
1.
This paper focuses on the positive photoresist’s application performance influence that the graft matrix and 2,1,5-sulfonylchloride(2-azo-1-naphthoquinone-5-sulfonyl chloride)(NDQ),which are used for composing LCD positive photoresist sensitive resin(PAC).
本文研究了液晶显示器件(LCD)正型光致抗蚀剂用感光树脂(PAC)所需接枝母体和2,1,5-重氮萘醌磺酰氯(NDQ)对正型光致抗蚀剂应用性能的影响。
补充资料:X射线抗蚀剂
分子式:
CAS号:

性质:采用软X射线(波长0.4~5nm)作为曝光源的抗蚀剂。由于X射线波长较紫外波长短两个数量级,几乎没有衍射的干扰,而且因其能量比电子束小得多,可以获得高分辨率,X射线对尘埃的透过性好,曝光工艺的缺陷率就低。所有的电子束抗蚀剂均可作X射线抗蚀剂。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条