1) SOI
绝缘硅
2) insulating silicone grease
绝缘硅脂
3) isolateds ilicon epitaxy
绝缘硅外延
4) insulation
绝缘
1.
Study of insulation adhesive based on epoxy resins modified with PEPDMS;
环氧基苯基硅油改性环氧树脂绝缘胶的研究
2.
Influence of insulation on diamond synthesis and its effective monitoring method;
绝缘程度对人造金刚石合成的影响及其有效监测办法
3.
Study on Sialon Insulation Materials for Channel in Coal—Fired MHD Generator;
用于燃煤磁流体发电通道的Sialon绝缘材料的研究
5) Isolation
绝缘
1.
Study on the isolation technology of metal shell plasma electrode pockels cell;
阳极化膜用于等离子体电光开关放电腔绝缘模拟研究
2.
The theories of isolation inspecting in power supply systems are expounded.
介绍了采用不平衡电桥实施直流电源系统在线绝缘监测的原理 ,给出了直流电源系统故障接地电阻阻值及部位比例的理论计算公式 。
3.
The isolation for a giant super-high-voltage transformer is a paramountly important problem in the power system.
大型超高压变压器的绝缘问题是电力系统中的重大课题。
6) insulate
绝缘
1.
Study and Application of the Main Transformer On-line Insulates Monitor in the Second Electric Power Plant of Hancheng;
韩城二电主变压器绝缘在线监测研究与应用
2.
The On-line Insulates Monitor and Studies Application on the Main Transformer of the 220kV Transformer Substation;
220kV变电站主变压器绝缘在线监测研究及应用
3.
Thesis aiming at the condition that large-acreage contamination flashover happened in electric network many times in our country under bad weather, the cause of large-acreage contamination flashover is analyzed from such ways as the insulated level of the power transformation device, air pollution and meteorologic.
本文针对我国电网在恶劣气候侵袭下,多次发生大面积污闪事故的情况,从输变电设备外绝缘水平、大气污染和气象因素等方面,分析了电网发生大面积污闪的原因,提出了现阶段输变电设备外绝缘配置原则和防污措施。
参考词条
补充资料:绝缘硅脂
分子式:
CAS号:
性质: 是用硅油稠化而成的膏状物。硅油的通式,R为CH3、C6H5。绝缘硅脂无毒、无味、闪点高、凝固点低、蒸气压低、黏温系数小,耐高低温、抗氧化、电绝缘性能好。可在-50~+200℃范围内长期工作。添加气相法白炭黑的绝缘硅脂性能如下:针入度(25℃)200~280 1/10mm,油离度(200℃×24h)≤10%,挥发分(200℃×24h)≤2.0%,介电强度≥9MV/m,相对介电常数(1MHz)2.5~3.5,介质损耗因数(1MHz)≤1×10-3,体积电阻率1.6×1014Ω·cm。可由硅油与气相法二氧化硅混配来制取。作为填充和绝缘包封料广泛用于电子电器工业。
CAS号:
性质: 是用硅油稠化而成的膏状物。硅油的通式,R为CH3、C6H5。绝缘硅脂无毒、无味、闪点高、凝固点低、蒸气压低、黏温系数小,耐高低温、抗氧化、电绝缘性能好。可在-50~+200℃范围内长期工作。添加气相法白炭黑的绝缘硅脂性能如下:针入度(25℃)200~280 1/10mm,油离度(200℃×24h)≤10%,挥发分(200℃×24h)≤2.0%,介电强度≥9MV/m,相对介电常数(1MHz)2.5~3.5,介质损耗因数(1MHz)≤1×10-3,体积电阻率1.6×1014Ω·cm。可由硅油与气相法二氧化硅混配来制取。作为填充和绝缘包封料广泛用于电子电器工业。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。