2) quantum well laser
量子阱激光器
1.
This paper deduces the formula of the multi—quantum well laser s optimal well numbers.
推导了量子阱激光器(也称为低阈值量子阱激光器)的最佳阱数的计算公式,经与实验值相比较,比较吻合,并且用PSpice模拟了阈值电流与腔长的关系。
2.
The cross-saturation characteristics of GaN quantum well lasers are theoretically calculated and analyzed based on the analyses of the energy band structure and the transition matrix elements of GaN.
通过分析GaN能带结构和跃迁矩阵元,对GaN基量子阱激光器的交叉饱和特性作了理论上的计算与分析。
3.
In this paper,the current modulation characteristics of a high power GaAs/GaAlAs quantum well laser in low frequencies(100Hz～20KHz)were experimentally investigaed in the first time.
本文首次对高功率GaAs/GaAlAs量子阱激光器 ( 80 8nm)的低频 ( 10 0Hz～ 2 0KHz)电流调制特性进行了实验研究。
3) SCH quantum well laser
SCH量子阱激光器
1.
Study on the chaotic synchronization communication of different structure SCH quantum well lasers;
SCH量子阱激光器的混沌同步通信研究
4) multi-quantum well laser
多量子阱激光器
1.
At the same time,a multi-quantum well laser is used as laser LED,which makes the carrier frequency have a wide range(0~20 MHz),and so enhances the frequency bandwidth and dynamical range of PGC demodulation.
采用多量子阱激光器作为光源,使载波信号工作在较高的频率范围(0~20 MHz),从而提高了系统带宽和动态范围。
5) quantum-well laser
量子阱激光器
1.
This paper introduced progress in optoelectronics disp la y technology, optoelectronics devices used in optical communication, high-densi ty photomemory, and quantum-well laser at home and abroad.
文章介绍了光电显示技术 ,光通信用光电子器件 ,高密度光存储技术和量子阱激光器的国内外进展情况 。
2.
Aiming at the high-power laser,the vertical far-field divergence angle was reduced by the very narrow waveguide and the mode expanding waveguide structures,a simplified model of the far-field distribution of quantum-well lasers with a very narrow waveguide structure and the theoretical value of the vertical divergence angle were achieved,the vertical divergence angle was reduced to 2.
使用三层平板波导理论分析了半导体量子阱激光器远场分布。
6) quantum well lasers
量子阱激光器
1.
Based on calculation of energy structures and dipole transition matrix elements,theoretical calculation and analysis of polarization dependent optical gain and gain saturation are given for GaN quantum well lasers to investigate the characteristics of nonlinear gain.
通过计算GaN能带结构和跃迁矩阵元 ,对GaN基量子阱激光器的极化相关增益和增益饱和特性作了理论上的计算与分析。
2.
This paper presents a waveguide model and a detailed calculation method for quantum well lasers with GRIN SCH structure,and analyzes how the aluminum density in Al xGa 1-x AsGRIN layer and the thickness of GRIN layer effect the effective refractive index.
本文给出了具有ＧＲＩＮ－ＳＣＨ结构量子阱激光器的光波导模型和详细的数值计算方法，并计算分析了Ａｌｘ Ｇａ１－ ｘＡｓＧＲＩＮ层中Ａｌ浓度和ＧＲＩＮ层厚度对等效折射率的影响，给出了ＧＲＩＮ层厚的最佳值范围；给出了宽接触ＩｎＧａＡｓ／ＡｌＧａＡｓ ＧＲＩＮ－ＳＣＨ量子阱激光器的近场分布三维图形，并由近场分布通过快速傅里叶变换求出了远场分布。
3.
In this paper, the theoretical design for the quantum well lasers with vertically integrated passive waveguides, which decreases the vertical beam divergence effectively, are reported.
报道了一种具有垂直集成无源波导的耦合波导结构量子阱激光器的理论设计，它可以使垂直结平面方向的远场光束发散角得到有效的降低。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条