The calculated critical trap density N bd by total charge to breakdown Q bd and ΔV bd is valuable for quantitative evaluation of the reliability of thin gate dielectric film.

Study of conductive property for a N-VDMOS interface trap under X-ray radiation;

Study on avalanche hot-electron injection of interface trap characteristic for thin film in nanometre range formed by PECVD;

This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics.

Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.

Two-dimensional device simulating software MEDICI was used to establish the structure model and physical model of an n-channel 6H-SiC MOSFET with interface traps having a exponential distribution.

A new experimental technique namely the linear cofactor difference sub-threshold voltage method is presented in this paper for extraction of the MOSFET interface traps induced by the gate oxide stress test and verified on N-MOSFETs.

TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented.