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1)  buffer silica film
过渡SiO2薄膜
2)  SiO_2 film
SiO2薄膜
1.
The SiO_2 films at various O_2/Ar flow ratios were prepared by reactive d.
在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜。
2.
0 nm thick SiO_2 film,by vacuum deposition.
0 nm厚SiO2薄膜。
3.
The stability of charge storage of the SiO_2 film electret is improved by the plasma surface treatment of the thermal grown SiO_2 film on the Si substrate.
利用等离子体对硅衬底上热生长SiO2薄膜进行表面处理,提高了二氧化硅薄膜驻极体电荷的储存稳定性。
3)  ZrO2/SiO2 film
ZrO2/SiO2薄膜
4)  TiO2-SiO2 thin film
TiO2-SiO2薄膜
1.
TiO2-SiO2 thin films were prepared on slide glass substrates by sol-gel method.
当SiO2添加量为30%时,在紫外光照1h时TiO2-SiO2薄膜的光催化活性最佳。
5)  SiO2 film
SiO2薄膜
1.
Discuss on the FTIR of the SiO2 film produced by Reactive Sputtering.
用反应溅射法制成了SiO2薄膜,应用傅立叶变换红外吸收光谱图研究其特性。
2.
064 μm pulsed laser induced ripple damage on SiO2 film which was deposited on K9 glass substrate by electron beam evaporation,was been investigated.
064μm波长的单脉冲(6 ns)激光对K9玻璃基底上电子束沉积的单层SiO2薄膜进行了辐照损伤实验。
3.
Results show that the prepared SiO2 films can increase the transmission of sapphire in mid-wave IR greatly.
采用射频磁控反应溅射法在蓝宝石衬底上制备了SiO2薄膜,测试了镀膜前后蓝宝石试样的红外透过率,测试并分析了镀膜与未镀膜蓝宝石试样在高温及雨蚀后的红外透过性能。
6)  SiO2/Si3N4 films
SiO2/Si3N4薄膜
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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