1) Schottky barrier height
肖特基势垒高度
1.
The result shows that Schottky barrier height decreases , ideal factor increases and surface condition of contacts degenerates when annealing temperature increases for unintentional doped GaN.
实验结果表明,在非故意掺杂的样品上,随退火温度的升高,肖特基势垒高度下降,理想因子升高,表面状况逐渐变差,600℃退火形成较低接触电阻的欧姆接触,比接触电阻率为3。
2) Schottky barrier
肖特基势垒
1.
Study on Au Metal/n-type Semiconductor GaN Schottky Barrier;
金属/n型半导体(Au/n-Ga N)肖特基势垒的研究(英文)
2.
When the Schottky barrier height(Eb)is higher than 0.
当TiO2/TCO的肖特基势垒(Eb)大于0。
3.
Based on the characteristics of the electronic state in ZnO varistors, Schottky barrier at interface influenced the conductance properties and the dielectric properties.
基于ZnO压敏电阻器的电子态特征 ,界面肖特基势垒不仅对其导电性能 ,而且对其介电性能也有决定性的影响 。
3) schottky barriers
肖特基势垒
1.
Study on annealing on Au/n-ZnO Schottky barriers characteristics;
Au/n-ZnO肖特基势垒特性的退火行为研究
2.
The grown schottky barriers show good rectifier characteristics by testing the I-V characteristics of the structure of Ag-SiOx-nGaAs and Au-SiOx-nGaAs.
应用化学电共沉积法在Ti片、导电玻璃和导电PI基片上制备了GaAs多晶薄膜,并在薄膜上应用电子束蒸发淀积了一层超薄的SiOx,然后采用PVD法在其上淀积一层金属薄层,制备出MIS结构的肖特基势垒。
4) Schottky-barrier
肖特基势垒
1.
The Schottky-barrier of crystalloid and Freundlich adsorption isotherm on solid surface are used to explains the relation between SnO2 conductance and the volume fraction on tested gas and the operating temperature.
为了分析CMOS SnO2气体传感器的工作,有必要建立合适的模型,采用晶粒边界的肖特基势垒模型和固体表面对气体的Freund lich等温吸附很好地解释了SnO2的电导与检测气体体积分数工作温度之间的关系,利用ANSYS 7。
2.
According to the photoyield model, the detector quantum efficiency can be improved by utilizing PtSi thin film optical cavity structure and by reducing Schottky-barrier height.
由光产额模型可知,采用薄PtSi光腔结构和降低肖特基势垒可提高量子效率。
3.
A 1024-element PtSi Schottky-barrier infrared charge coupled device(CCD) line image sensor has been developed.
介绍了我们研制的1024元线列PtSi肖特基势垒红外电荷耦合器件(CCD)。
5) Shottky barrier electrode
肖特基势垒电极
6) Schottky barrier contact
肖特基势垒接触
补充资料：肖特基势垒（Schottkybarrier）
肖特基势垒（Schottkybarrier）
金属和半导体接触形成半导体表面势垒，此势垒又称肖特基势垒。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条