1) Schottky barrier diode
肖特基势垒二极管
1.
I-V characteristics of 4H-SiC Schottky barrier diodes under high temperature;
高温Ti/4H-SiC肖特基势垒二极管的特性
2.
The whole circuit uses low power consumption and low voltage parts such as a new high speed digital optical-coupler HCPL-060L and Schottky barrier diode etc.
介绍了RS-232接口与RS-485接口无源光电隔离转换器的设计,采用简单实用的串口窃电技术,整个电路使用了新型高速数字光电耦合器HCPL-060L、肖特基势垒二极管等低功耗、低工作电压的元器件,并详细说明了硬件的设计。
3.
Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.
在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管 。
2) SBD
肖特基势垒二极管
1.
In addition, we fabricated Au and Ni Schottky Barrier Diodes (SBDs) on Silicon surface of n-type 6H-SiC.
本文讨论了n型6H-SiC欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属Au及Ni在n型6H-SiC硅面(0001晶向)上制备了具有一定特性的肖特基势垒二极管。
3) Schottky diodes
肖特基势垒二极管
1.
The key device of the mixer is a pair of GaAs beam lead antiparallel Schottky diodes.
混频的核心元件是反向并联的GaAs梁式引线肖特基势垒二极管对。
4) Schottky barrier diodes
肖特基势垒二极管
1.
Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes;
4H-SiC肖特基势垒二极管伏-安特性的解析模型
5) schottky diode
肖特基势垒二极管
1.
The manufacturing process of ntype 6Hsilicon carbide Schottky diode with electrode deposited by DCmagnetron sputtering has been studied in the paper The electrical and temperature characteristics of Pt/6HSiC Schottky diode were studied Results show that the device has good rectifying property, lower reverse current and high voltage It can also operate stably at high temperature (600 °C)
采用直流磁控溅射法、Pt作肖特基接触的工艺,制作了N型6H-SiC肖特基势垒二极管,对肖特基势垒二极管的电学特性及温度特性进行了研究。
6) SiC-Based Schottky Barrier Diode
SiC肖特基势垒二极管
1.
Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode;
SiC肖特基势垒二极管在PFC电路中的应用
补充资料：肖特基势垒（Schottkybarrier）
肖特基势垒（Schottkybarrier）
金属和半导体接触形成半导体表面势垒，此势垒又称肖特基势垒。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条