1) ZnO/Ga2O3 films
ZnO/Ga2O3薄膜
1.
ZnO/Ga2O3 films were nitrided in tube furnace under flowing NH3 ambience.
利用射频磁控溅射法在Si(111)衬底上先溅射ZnO中间层,接着溅射Ga2O3薄膜,然后ZnO/Ga2O3薄膜在管式炉中常压下通氨气进行氮化,高温下ZnO层在氨气的气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米管。
2) Ga_2O_3
Ga2O3薄膜
1.
Gallium nitride thin films have been successfully grown on the Ga-diffused Si (111) substrates through nitriding Ga_2O_3 thin films deposited by rf magnetron sputtering and the growth condition was investigated.
采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜,再氮化反应组装GaN晶体膜,并对其生长条件进行了研究。
3) Ga2O3 thin films
Ga2O3薄膜
1.
Gallium nitride thin films have been successfully grown on the pre-deposition and re-distribution after Ga-predeposited of the Ga-diffused Si(111) substrates through nitriding Ga2O3 thin films deposited by r.
采用射频磁控溅射工艺在预沉积和预沉积后再分布的扩镓S i基上溅射Ga2O3薄膜氮化反应组装GaN薄膜。
4) Ga2O3 thin film
Ga2O3薄膜
1.
GaN thin films were successfully grown on the Ga-diffused Si (111) substrates throughnitriding Ga2O3 thin films deposited by r.
采用射频磁控溅射在扩镓硅基上溅射Ga2O3薄膜,然后氮化反应组装GaN晶体膜,并研究氮化时间对薄膜晶体质量的影响。
2.
A high-quality gallium nitride nanowire were synthesized through ammoniating Ga2O3 thin films deposited by rf magnetron sputtering.
用氨化溅射Ga2O3薄膜的方法,成功地合成了一维GaN纳米线。
5) nano Ga 2O 3 thin film
纳米Ga2O3薄膜
6) Ga2O3/ITO/Ga2O3 films
Ga2O3/ITO/Ga2O3膜
1.
Ga2O3 films and Ga2O3/ITO/Ga2O3 films were prepared by alternate RF magnetron sputtering of Ga2O3target and DC magnetron sputtering of ITO(indium tin oxide)target.
用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO(锡铟氧化物)靶材分别制备了Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜,用紫外-可见分光光度计、四探针测试仪对Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜的光学透过率和电阻率进行了表征。
补充资料：iron zinc oxide (fe2zno4)
CAS：12063-19-3
分子式：Fe2ZnO4
中文名称：氧化铁锌
英文名称：Iron zinc oxide；iron zinc oxide (fe2zno4)；diiron zinc tetraoxide
分子式：Fe2ZnO4
中文名称：氧化铁锌
英文名称：Iron zinc oxide；iron zinc oxide (fe2zno4)；diiron zinc tetraoxide
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条