1) modulated doping QW
调制掺杂量子阱
1.
With the novel modulated doping QW base and buried metal self-align process, the base lateral resistance and contact resistance of ultra-thin-base small-size SiGe HBTs are decreased by 42% and 55% respectively, which provides an effective method of resolution on base serial resistance.
采用新型调制掺杂量子阱基区结构和掩埋金属自对准工艺方法,在器件的纵向结构和制备手段上同时进行改进,使超薄基区小尺寸SiGeHBT的基区横向电阻和接触电阻分别降低42%和55%以上,有效解决了基区串联电阻的问题。
2) doping GaAs MQW
δ掺杂GaAs多量子阱
3) modulation-doped
调制掺杂
1.
The electron-sheet-density in the quantum well of Strain-Si modulation-doped NMOSFET(Metal-Oxide-Silicon Field Effect Transistor)affects switch performance.
应变Si(Strain Si)调制掺杂NMOSFET量子阱沟道中电子面密度直接影响器件的开关特性。
4) doping tuned
掺杂调制
5) quantum well intermixing
量子阱混杂
1.
A semiconductor optical amplifier and electroAbsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.
采用选择区域生长、量子阱混杂和非对称双波导技术制作了电吸收调制器与半导体光放大器和双波导模斑转换器的单片集成器件。
2.
An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.
采用量子阱混杂的方法制作了可集成的分布式 Bragg反射激光器 。
3.
Experiment on quantum well intermixing (QWI) of InGaAsP QWs by impurity free vacancy diffusion (IFVD) using SiO 2 encapsulation is reported.
报道了使用SiO2 介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验 ,得到 2 0 0nm的最大带隙波长蓝移 。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条