As a shallow electron trap dopant,it can improve the photographic sensitivity effectively.

By comparing the electron signal with that of pure specimen,it is found that the free photoelectrons decay time is delayed 338ns by the introduced shallow electron traps.

The effect of Ruthenium dopant on photographic sensitivity by varying the dopant amount and location in model sliver bromide cubic emulsions has been studied It is concluded that doping Ruthenium, which functions as shallow electron traps inside sliver bromide crystal, is beneficial for increasing sensitivit

To describe the photoelectron rise and decay process of AgCl microcrystals doped with [Fe(CN) 6] 4-, a kinetics model composed of three intrinsic centres and a shallow electron traps(SETs)is set up, and further more, a set of differential equations is deduced.

According to the basic model that describes the microcosmic dynamics process of light-generated carriers,it is analyzed that the free photoelectron decay time changes with the trap depth and density of shallow electron traps.

The electron trap effect of the sulfur+gold sensitization center on the photoelectron behaviors;

It is found that the trap effect of the sensitization centers varies from the hole trap to deep electron trap with the change of sensitization conditions.

The influence of electron traps in silver bromide microcrystal, on .

Electron paramagnetic resonance(EPR) was also used to investigate electron traps in the phosphor.

With the novel modulated doping QW base and buried metal self-align process, the base lateral resistance and contact resistance of ultra-thin-base small-size SiGe HBTs are decreased by 42% and 55% respectively, which provides an effective method of resolution on base serial resistance.