1) alternating PSM
交替式移相掩模
1.
Another method is to decompose the original design pattern into several alternating PSM sub-patterns based on geometrical rules and multiple-exposure of these sub-masks.
讨论了100nm分辨率交替式移相掩模设计中的关键问题,以及通过对版图的拓扑分析,建立自动化的解决相位冲突的各种方法。
2) alternating mask
交替式相移掩模
3) Alternating phase-shift mask
交替型相移掩模
4) alternating phase shifting mask
交替移相掩模
5) alternating aperture phase shift mask
交替移相掩模技术
6) phase-shifting mask
相移掩模
1.
Phase-shifting mask for 100nm node ArF excimer laser lithography;
用于100nm节点ArF准分子激光光刻的相移掩模技术
2.
Process window improvement is presented due to off-axis illumination(OAI) and phase-shifting mask(PSM) for 193 nm immersion lithography at 65 nm node.
研究了交替型相移掩模及离轴照明对65nm分辨率ArF浸没式光刻的影响。
补充资料：相掩
1.相抵。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条