1) optical transition
光跃迁
1.
The mechanism of the optical transition without phonons between the conduction band and the valence band in doped SiGe alloy is investigated, and the model of no phonon optical transition originated from the statistical distribution of the impurities is suggested.
研究了Ｓｉ１－ｘＧｅｘ合金半导体中无声子参与光跃迁的产生机制，对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型。
2.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
2) photoluminescence energy
光跃迁能
1.
The results show that when there is hydrogenic-like impurity in the center of QDs,the exciton ground-state energy and the photoluminescence energy are reduced,and the exciton binding energy and the stability of exciton state ar.
结果表明:量子点中心的类氢杂质使激子的基态能降低,结合能升高,Q D系统的稳定性增强,光跃迁能减小;杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定;随着杂质从量子点的上界面沿着z轴移至下界面,激子基态能和光跃迁能增大,结合能减小。
4) transition due to light
光致跃迁
5) optical transition
光学跃迁
1.
Based on the Judd-ofelt theory,the optical transition intensity parameters were calculated.
利用标准的Judd-ofelt理论对Er~(3+)在该体系玻璃中光学跃迁性质进行了计算,得到了光学跃迁强度参数Ω_2、Ω_4和Ω_6对玻璃组分的依赖关系。
2.
Optical transition intensity parameters for Er3+ ion were calculated based on the three-parameter Judd-Ofelt theory.
利用标准的三参量Judd-Ofelt理论对Er3+的光学跃迁性质进行了计算,并对Er3+离子的4I13/2能级的量子效率进行了研究。
补充资料：表光合强度(见光合强度)
表光合强度(见光合强度)
forecast of sowing or transplanting time
b iaoguanghe qiangdu表光合强度见光合强度
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条