1) sacrificial layers fabrication
牺牲层制备
1.
The processes of sacrificial layers fabrication were studied.
研究了牺牲层制备的工艺过程。
2) sacrificial layer
牺牲层
1.
A sacrificial layer release-etch model for etching sacrificial silicon dioxide in aqueous HF solutions was presented by Eaton, et al.
Eaton等人曾给出了HF溶液腐蚀Si O2牺牲层的释放腐蚀模型,然而实验中发现该模型并不能较好地符合实验数据。
2.
An instrument was installed to in-situ monitor the etching process of the sacrificial layer SiO2using hydrofluoric acid(HF),which is influenced by such factors as temperature,composition and concentration of the etchant,sacrificial material,residual stresses of the material,etc.
设计了多种测试结构,采用在线实时观测的手段,深入研究了氢氟酸(HF)刻蚀二氧化硅牺牲层中,多种因素对刻蚀过程产生的影响,并对实验结果进行了详细分析。
3.
The switch was fabricated by UV-LIGA technology using photoresist as a sacrificial layer.
介绍了一种基于UV-LIGA加工技术的双稳态电磁型RF MEMS开关,该结构由于使用了永磁体单元而使得开关在维持“开”或“关”态时不需要功耗,利用牺牲层UV-LIGA技术实现了开关的微制作。
3) Sacrificial layers
牺牲层
1.
Fabrication of free standing structure using oxidized porous silicon as sacrificial layers;
用氧化多孔硅作牺牲层制备悬空微结构
2.
Sacrificial layers technology is developing towards multiple layers and integration.
指出表面牺牲层技术和体硅加工技术是硅基MEMS加工技术的两条发展主线 ;表面牺牲层技术向多层、集成化方向发展 ;体硅工艺主要表现为键合与深刻蚀技术的组合 ,追求大质量块和低应力以及三维加工。
4) GaAs sacrificial layer
GaAs牺牲层
1.
Meanwhile,the etching rate of GaAs with C6H8O7/H2O2 solution was measured;a DBR(distributed bragg reflector) structure with a GaAs sacrificial layer was selectively etched to make an air cavity,and its etching characteristic was analyzed with the crystal structure of GaAs,which was made a base for the real fabricat.
测定了C6H8O7/H2O2溶液对GaAs的腐蚀速率,并采用这种方法选择性腐蚀了一个带有GaAs牺牲层的DBR(distributed bragg reflector)结构,得到一个空气腔结构,结合GaAs的晶体结构,分析了GaAs的各向异性腐蚀特性,为实际MEMS器件的制作奠定了基础。
5) sacrifice layer
牺牲层
1.
Pressure sensor technology for sacrifice layer structure
牺牲层结构压力传感器技术
2.
The switch is fabricated by three layer process with Pyrex base as well as UV LI GA and sacrifice layer technology.
设计过程中采用有限元软件Ansys进行结构模拟计算 ,确定了合适的结构参数 ;以硼硅玻璃为基底 ,采用准LIGA和牺牲层技术 ,分三层制作完成。
3.
The three-dimensions copper interconnects were fabricated by electrolytic photoetching and following chemical mechanical polish,finally the three dimensions copper structure was released by removing the sacrifice layer.
为了降低互连延迟,提出了一种全新的全局互连结构,即利用掩膜电镀和CMP技术形成三维的铜互连结构,再利用牺牲层技术将三维结构镂空,得到悬空的全局互连结构。
6) Cu sacrificial layer
Cu牺牲层
补充资料：制备薄层色谱法
分子式：
CAS号：
性质：以提纯化合物为目的，在载板上增加薄层的厚度，使其能处理较大量试样的薄层色谱法。除用厚层板薄层色谱法外，还有多层板薄层色谱、离心薄层色谱、棒型薄层色谱等。
CAS号：
性质：以提纯化合物为目的，在载板上增加薄层的厚度，使其能处理较大量试样的薄层色谱法。除用厚层板薄层色谱法外，还有多层板薄层色谱、离心薄层色谱、棒型薄层色谱等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条