1) non-uniform well-thickness multi-quantum wells
非均匀阱宽多量子阱
1.
In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.
为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。
2) non-uniform well-thickness
非均匀阱宽
1.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated,the output properties of light power and spectrum were measured and analyzed.
采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/AlGaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。
3) channel thickness
量子阱宽
1.
52AlAs high electron mobility transistor(HEMT)structures with different channel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.
4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
4) Multiple Quantum wells
多量子阱
1.
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering;
反应磁控溅射ZnO/MgO多量子阱的光致荧光光谱分析
2.
GaAs/AlGaAs(110)multiple quantum wells(MQWs)were grown by solid source molecular beam epitaxy(MBE)with a valved arsenic cracker cell.
采用固态源分子束外延的方法在GaAs(110)取向衬底上生长了GaAs/Al GaAs多量子阱结构。
3.
The DR spectra of GaAs/Al 0 25 Ga 0 75 As multiple quantum wells (MQWs) samples were measured experimentally.
利用振动光束差分反射测试系统 ,获得了 Ga As/Al Ga As多量子阱材料的 DR谱 ,初步分析了 DR信号的产生机制 。
5) multi-quantum well
多量子阱
1.
Analyzing the unstable reason of GaN-based blue light LED peak wavelength,it was the quantum restrictionStark effect caused by the multi-quantum well area.
分析了引起GaN基蓝光LED峰值波长不稳定的原因,它是由多量子阱区内极化效应引起的量子限制斯塔克效应造成的。
2.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVDⅡ system.
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量。
3.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
6) Multi quantum well
多量子阱
1.
The rate equations for multi quantum well VCSELs are deduced theoretically; and its output characteristics, i.
从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。
2.
Multi quantum well interface quality is one of key factors that affect device performance.
利用金属有机气相沉积技术生长ＩｎＧａＡｓＰ／ＩｎＰ多量子阱结构，通过改变生长程序，得到了优化的陡峭量子阱界面。
3.
For cases of a Si∶H film and a Si∶H/ a SiN x∶ H multi quantum well structure on the quartz substrates irradiated by the KrF pulsed excimer laser, we analyzed the effect of film thickness, laser energy density and the ratio of sublayers′ thicknesses of a Si∶H/ a SiN x∶ H MQW structure on the temperature distribution and crystall.
结合ＫｒＦ准分子脉冲激光对淀积在熔凝石英衬底上的ａ－ＳｉＨ薄膜以及ａ－ＳｉＨ／ａ－ＳｉＮｘＨ多量子阱结构材料的热退火处理，分析了膜厚、激光能量密度以及ａ－ＳｉＨ／ａ－ＳｉＮｘＨ多量子阱结构材料中的子层厚度比对温度场性质及ａ－ＳｉＨ薄膜的晶化效果的影响。
补充资料：量子阱（quantumwell）
量子阱（quantumwell）
量子阱是一种人工设计采用外延方法生长的半导体微结构。其主要特性是电子（空穴，有时还包括光子）在空间上被限制在一个很薄的区域内运动，该区域的厚度小于电子的德布罗意波长，电子（空穴）行为表现出二维特征。量子阱结构主要用于发光器件和光电探测器件。和非量子阱结构相比，由于在量子阱中电子（空穴）相对比较集中（有时光子也比较集中），所以有很高的量子效率，用于半导体激光器能大幅度降低阈值电流密度，增加输出功率。量子阱结构中，与量子阱层相对的还有势垒层，用以限制电子（空穴）在垂直于阱面方向上的运动。量子阱结构通常用分子束外延或金属有机化学气相淀积方法制备。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条