1) quantum well width
量子阱宽度
2) channel thickness
量子阱宽
1.
52AlAs high electron mobility transistor(HEMT)structures with different channel thickness of 10—35 nm have been investigated in magnetic fields up to 13 T at 1.
4K下不同量子阱宽度(10-35nm)的InP基高电子迁移率晶体管材料的二维电子气特性。
3) non-uniform well-thickness multi-quantum wells
非均匀阱宽多量子阱
1.
In this paper,non-uniform well-thickness multi-quantum wells structure was adopted to widen the output spectrum of superluminescent diode.
为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。
4) the width of potential well
势阱宽度
5) Quantum well
量子阱
1.
Resonant modes in quantum well structure composed of photonic crystals with different lattice constants;
不同晶格常数光子晶体构成的光量子阱中的共振模
2.
Optical properties and material growth of GaAs(110) quantum wells;
GaAs(110)量子阱材料生长和光学特性
3.
Light emitting model of GaN LED quantum well;
GaN LED量子阱光发射模型
6) photonic quantum well
光量子阱
1.
Modulated photon confined states with graded-index photonic quantum well structure;
渐变折射率光量子阱对束缚态能级的调整
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条