1) InGaAs base
InGaAs基区
2) Be-doped InGaAs base
Be掺杂InGaAs基区
3) InP based InAlAs/InGaAs HEMT
InP基InAlAs/InGaAs HEMT
4) strained InGaAs/Al_(0.2)Ga_(0.8)As
InGaAs/Al0.2Ga0.8As
6) InGaAs thin film
InGaAs薄膜
1.
InGaAs thin film was prepared by using optimized electrodeposited conditions.
5μm波长的InGaAs薄膜 。
补充资料：2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
CAS: 1067-66-9
分子式: C12H28N2O5Si
分子量: 308.45
中文名称: 2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
英文名称: [N'-(2-Methoxycarbonylethyl)aminoethylaminopropyl]trimethoxysilane
10-diaza-3-silatridecan-13-oic acid, 3,3-dimethoxy-2-oxa- methyl ester
n-(2-((3-(trimethoxysilyl)propyl)amino)ethyl)-beta-alanin methyl ester
methyl 3,3-dimethoxy-2-oxa-7,10-diaza-3-silatridecan-13-oate
methyl[2-(3-trimethoxysilylpropylamino)-ethylamino
分子式: C12H28N2O5Si
分子量: 308.45
中文名称: 2-甲氧基碳酸基乙基胺基乙基胺基丙基三甲氧基硅烷
英文名称: [N'-(2-Methoxycarbonylethyl)aminoethylaminopropyl]trimethoxysilane
10-diaza-3-silatridecan-13-oic acid, 3,3-dimethoxy-2-oxa- methyl ester
n-(2-((3-(trimethoxysilyl)propyl)amino)ethyl)-beta-alanin methyl ester
methyl 3,3-dimethoxy-2-oxa-7,10-diaza-3-silatridecan-13-oate
methyl[2-(3-trimethoxysilylpropylamino)-ethylamino
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条