1) MCVD
化学气相沉积法(MCVD)
2) Chemical vapor deposition
化学气相沉积法
1.
Silica coating was prepared by atmospheric pressure chemical vapor deposition taking HP40 steel plate as substrate,tetraethyl orthosilicate as silica source,and air as carrier gas and diluent.
以正硅酸乙酯为硅源物质、空气为载气和稀释气,采用常压化学气相沉积法在HP40钢表面制备了SiO2涂层;采用扫描电子显微镜和能量色散能谱表征了SiO2涂层的组织结构和表面形貌;考察了在乙烯裂解的工艺条件下SiO2涂层的结焦抑制能力。
2.
Single-walled carbon nanotubes have been prepared from coal gas by catalytic chemical vapor deposition technique with ferrocene as catalyst, and electrochemistry analysis was carried on supercapacitance using nanotubes as electrodes.
开发以煤气为碳源采用化学气相沉积法制备单壁碳纳米管,并对其作为超级电容器电极的电化学性能进行研究。
3.
Carbon nanotubes (CNTs) is prepared by means of chemical vapor deposition (CVD) method.
利用化学气相沉积法制备碳纳米管(carbonnanotubes,CNTs),分析了气源、催化剂及温度等因素对CNTs形貌和纯度的影响。
3) CVD
化学气相沉积法
1.
Well-aligned open-ended multi-walled carbon nanotube (MWCNT) arrays were prepared via chemical vapor deposition (CVD) method in porous anodic aluminum oxide (AAO) templates without depositing any transition metals as catalyst.
在不加过渡金属做催化剂的前提下,利用化学气相沉积法在二次阳极氧化法制得的多孔氧化铝模板中制备沉积了定取向碳纳米管阵列。
2.
In recent year, the helical carbon fibers are preparation by chemical vapor deposition method(CVD), which commercial acetylene as the carbon source, a nickel as catalyst, a sulfur compound as impurity, reaction temperature at 700~850℃.
近年来螺旋形碳纤维的制备方法主要是化学气相沉积法 (CVD法 )。
3.
In the present work, different shaped carbon nanotubes were produced by the general CVD and the template method at different temperature (600 ℃,700 ℃) with the reaction gas of acetylene.
以乙炔作为反应气 ,用化学气相沉积法 (CVD)和模板法在不同温度 (60 0℃、70 0℃ )下制备了不同形貌的碳纳米管 ,并采用TEM ,HRTEM ,SEM ,XRD ,Raman和充放电实验方法研究其形貌、结构和电化学嵌锂性能 。
4) CVD method
化学气相沉积法
1.
Multiwall carbon nanotubes were prepared by CVD method using Ni-Cu-Al catalyst and methane was the reactant gas for the use of synthesis MWNTs with inner diameter of 25~50 nm.
采用共沉淀-凝胶法制备N i-Cu-A l催化剂,以甲烷为气源利用化学气相沉积法制备内径为25~50 nm的大孔径碳纳米管,研究了催化剂制备条件、反应温度以及反应气流速对碳纳米管和碳产率的影响。
5) chemical vapor deposition method
化学气相沉积法
1.
Multi-walled carbon nanotubes were synthesized by chemical vapor deposition method at the temperature of 750℃,using AB_5 hydrogen storage alloy as a catalyst,methane as a raw material.
在750℃条件下,以AB5储氢合金为催化剂,甲烷为原料气,采用化学气相沉积法制备出多壁碳纳米管。
2.
In this paper,we used the hot filament chemical vapor deposition method to synthesize fine grain diamond films on silicon wafers aiming to exploit diamond's acoustic properties.
金刚石/硅声表面波基片的金刚石层晶粒的细化有利于传播能量损耗的降低,采用热丝化学气相沉积法进行了硅基体上沉积细晶粒金刚石工艺的初步探索。
6) chemical vapour deposition
化学气相沉积法
1.
Developments of diamond films by plasma chemical vapour deposition are reviewed in the paper.
本文评述了化学气相沉积法制备人造金刚石薄膜的进展情况。
2.
In this paper, NiCr alloy was vaporized on the silicon in vacuum as the catalyzer and synthesized Carbon NanoTubes (CNTs) film using chemical vapour deposition.
采取直接在硅片上真空蒸镀NiCr合金作为催化剂,用化学气相沉积法制备了碳纳米管薄膜。
补充资料:等离子化学气相沉积
分子式:
CAS号:
性质:PCVD 化学气相沉积(CVD)法是制备无机材料,尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD,可在较低的温度下沉积,涂层均匀不剥落。
CAS号:
性质:PCVD 化学气相沉积(CVD)法是制备无机材料,尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD,可在较低的温度下沉积,涂层均匀不剥落。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条