1) Solid-phase crystallization
固相结晶
1.
The characteristics and applications of the SiGe film, fabrication process, solid-phase crystallization and solid state reaction with transition metals were summarized.
综述了锗硅薄膜材料的特性与应用、制备技术、固相结晶、与过渡金属的固相反应等一系列内容,探讨了提高锗硅薄膜结晶度的工艺手段和各自的优缺点,分析了锗硅薄膜与钴等过渡金属固相反应的特点及在集成电路上的应用。
2) solid phase epitaxial crystallization
固相外延结晶
3) solid phase crystallization
固相晶化
1.
The effects of B atoms on the solid phase crystallization of PECVD a-Si:H films is investigated by using the X-Ray diffraction,Hall measurements.
对掺硼（Ｂ）材料的固相晶化进行了研究。
5) crystalline solid phase
晶状固相
补充资料：二次再结晶(见再结晶晶粒长大)
二次再结晶(见再结晶晶粒长大)
secondary recrystallization
erCI 201」le」Ing二次再结晶(seeondary reerystallization) 见再结晶晶杠长大。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条