1) quantum dot laser
量子点激光器
1.
A new type of quantum dot laser,in which carriers are injected by tunneling is reviewed.
介绍了一种新型的载流子隧穿注入量子点激光器,具体内容涉及量子点激光器研究现状、存在的问题、隧穿注入量子点激光器的工作原理和优势、研究现状等。
2.
The wavelength-gain characteristics between quantum dot laser and other types of semiconductor lasers are compared.
将量子结构中的边界条件应用于薛定谔方程的求解,计算了量子结构中粒子的能量本征值及量子结构激光器的态密度和增益,比较了量子点、量子线、量子阱激光器的波长-增益特性,从能量本征值角度探讨了各种量子结构特性差异的根本原因,阐述了量子点激光器的实现问题,分析结果表明,量子点激光器具有高增益、高单色性的特点。
3.
Through quality improvement of quantum dot material and structure optimization of quantum dot laser material, we have developed high quality strain induced self organized InAlAs/AlGaAs/GaAs quantum dot material and red emitting quantum dot laser which can lase in continuous mode at low temperature.
通过提高量子点材料的质量和优化量子点激光器材料的结构 ,研制出高质量的应变自组装 In Al As/Al Ga As/Ga As量子点材料和低温连续激射的红光量子点激光器。
2) Quantum dot lasers
量子点激光器
1.
Quantum dot lasers provide superior lasing characteristics compared to quantum well (QW) lasers due to their delta like density of states.
与量子阱激光器相比, 量子点激光器因具有delta样的电子态密度而具有优异的光激发特性。
2.
Also,the improvement of quantum dot lasers’performance is investigated through vertical stacking and p.
研究了垂直层叠和p型掺杂对量子点激光器性能的改善,并讨论了获得极小阈值电流密度时的最佳量子点密度。
3) quantum-dot lasers
量子点激光器
1.
InAs/GaAs quantum-dot lasers grown by GSMBE are reported.
报道了InAs/GaAs量子点激光器GSMBE生长,激光器器件有源区包含了层叠的5层InAs量子点微结构。
4) Edge emitting quantum dot lasers
边缘发射量子点激光器
5) Vertical cavity quantum dot lasers
垂直腔面量子点激光器
6) InAs/GaAs quantum dot laser
InAs/GaAs量子点激光器
1.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条