1) short channel effect
短沟道效应
1.
The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。
2.
Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.
基于流体动力学能量输运模型 ,首先研究了槽栅器件对短沟道效应的抑制作用 ,接着研究了不同衬底和沟道杂质浓度的深亚微米槽栅PMOSFET对短沟道效应抑制的影响 ,同时与相应平面器件的特性进行了对比 。
3.
I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.
研究了 FINFET的 I- V特性、亚阈值特性、短沟道效应等 。
2) Short-channel effect
短沟道效应
1.
Computer simulation analysis of short-channel effects and corner effectsfor deep sub-micron triple-gate FinFETs
深亚微米三栅FinFET短沟道效应和拐角效应计算机模拟分析
2.
A new kind of sub-50 nm N channel double gate MOS nanotransistors was simulated by solving coupling Poisson-Schrdinger equations in a self-consistent way with a finite element method,and a systematic simulation-based study was presented on the short-channel effects.
采用有限元法自洽求解泊松-薛定谔方程,数值模拟了一种新型的亚50nm N沟道双栅MOS场效应晶体管的电学特性,系统阐述了尺寸参数对短沟道效应的影响规律。
3.
In this paper the methodology of modeling and characterization of modern MOSFET ,with emphasis on short-channel effects of deep-submicorns devices up to 0.
本文基于BSIM标准研究了现代深亚微米级MOSFET器件的建模和特征提取方法 ,着重在于短沟道效应方面 ,其中测试样品由MicronTM公司提供 ,最短沟道长度仅为 0 16微米 。
4) short-channel effects
短沟道效应
1.
SOI groove gate MOS devices, which constrain the Short-channel effects and resist the Hot-carrier effects effectively in Sub-micron field, compensate the defect of bad driving capability and sub-threshold characteristics in Bulk Groove gate devices.
SOI技术和槽栅MOS新器件结构是在改善器件特性方面的两大突破,SOI槽栅MOS器件结构能够弥补体硅槽栅MOS器件在驱动能力和亚阈值特性方面的不足,同时也保证了在深亚微米领域的抑制短沟道效应和抗热载流子效应的能力。
5) Reverse short-channel effect
反短沟道效应
6) short-channel effect
短沟效应
1.
Comparison with conventional long-channel device is made,it is pointed out that since the short-channel effects of SCE and DIBL should be overcome by special process,the effects can be depressed by Halo injection to form higher doping areas at two sides,and it becomes the completely concerned structure.
与传统长沟器件结构进行了比较,指出由于短沟效应(SCE)和漏致势垒降低(DIBL)效应需要专门工艺来克服,Halo注入通过在沟道两侧形成高掺杂浓度区,达到对SCE和DIBL进行有效抑制的目的,现已成为备受关注的结构。
补充资料：短沟道效应（shortchanneleffect）
短沟道效应（shortchanneleffect）
当金属-氧化物-半导体场效应晶体管（MOSFET）的沟道长度L缩短到可与源和漏耗尽层宽度之和(WS WD)相比拟时，器件将发生偏离长沟道（也即L远大于WS WD）的行为，这种因沟道长度缩短而发生的对器件特性的影响，通常称为短沟道效应。由于短沟道效应使MOSFET的性能变坏且工作复杂化，所以人们希望消除或减小这个效应，力图实现在物理上是短沟道的器件，而在电学上仍有长沟道器件的特性。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条