1) the secend dumbbell domain
布洛赫线链
2) Bloch line
布洛赫线
1.
The stability of vertical Bloch lines(VBLs)in the second kind of dumbbell domain(IID)walls in LPE garnet bubble films subjected to an in-plane field at different temperature is studied experimentally.
实验研究了温度和面内场对液相外延石榴石磁泡薄膜内,第II类哑铃畴(IID)畴壁内垂直布洛赫线(VBL)链稳定性的影响。
2.
The influence of the magnetostatic interaction between vertical Bloch lines (VBLs) on the stability of hard domains in garnet bubble films subjected to a magnetostatic bias field is investigated.
研究石榴石磁泡膜在直流偏磁场作用下布洛赫线间的静磁作用对硬磁畴稳定性的影响。
3.
The ultra-high-density Bloch line memory (BLM) uses negative vertical-Bloch-line (VBL) pairs in the walls of hard domains as information carriers.
超高密度固态布洛赫线存储器(BLM)是以硬磁畴畴壁中垂直布洛赫线(VBLs)作为信息载体，硬磁畴畴壁中VBLs产生及其稳定性的研究对超高密度布洛赫线存储器的研制和磁畴壁物理的发展都是非常重要的。
3) Bloch line physics
布洛赫线物理
1.
Some elementary knowledge of the Bloch line physics and the nanocomposite materials,and the corresponding studies performed at Magnetism Laboratory,Department of Physics,Hebei Normal University,were introduced.
简要介绍布洛赫线物理和纳米复合材料研究的一些基本情况以及河北师范大学物理系磁学实验室开展这两方面研究的现
4) vertical-Bloch-line chains
垂直布洛赫线
1.
Annihilation procession of vertical-Bloch-line chains in the walls of second kind of dumbbell domains produced by multi-branched-domains subjected to an in-plane field was investigated experimentally.
实验研究了面内场作用下枝状畴形成的第2类哑铃畴(IID)畴壁中垂直布洛赫线(VBL)链的解体过程。
5) vertical Bloch line
垂直布洛赫线
1.
The annihilation of vertical Bloch lines in the domain walls of three kinds of hard domains subjected to temperature is investigated experimentally.
研究了温度作用下 3类硬磁畴畴壁中垂直布洛赫线 (VBL)的消失过程 ,发现和证实了普通硬磁泡 (OHBs) ,第I类哑铃畴 (IDs)和第II类哑铃畴 (IIDs)都存在一个与材料参量有关的VBL解体的临界温度范围 。
2.
It is studied experimentally that the annihilation rule of vertical bloch lines(VBL) in the domain walls of ordinary hard bubbles(OHB) exerted alternatively by the "reconstitution" of static bias fields and inplane fields.
实验研究了直流偏场“整形”和面内场交替作用下普通硬磁泡畴壁中垂直布洛赫线（ＶＢＬ）的消失规律。
3.
Negative vertical Bloch line (VBL) pairs in the walls of stripe domains aligned in parallel are used as information carriers in BLM in which the presence and absence of VBL is represented by "1" and "0", respectively.
硬磁畴畴壁中垂直布洛赫线的形成及其稳定性的研究，对布洛赫线存储器(BLM)的研制与使用具有重要意义。
6) vertical-Bloch-line
垂直布洛赫线
1.
It was found that the break-down of vertical-Bloch-line is associated with the position of the dumbbell domains in the in-plane field,when the direction of the dumbbell domains is vetical to the orientation of Hip,the VBL in domains wall is eastest to disappear,when the direction of the dumbbell domains is paralled to the orientation of Hip,the VBL in the dimains wall .
通过对哑铃畴在面内场作用下自缩泡现象的研究，发现面内场作用下垂直布洛赫线链的解体与哑铃畴在面内场中的位置有关。
2.
It showed that the equilibrium separation between two neighbouring vertical-bloch-lines(VBLs)increase with the raising of temperatrue.
详细测量了第Ⅱ类哑铃畴在条泡转变标准场Ｈ＇ｓｂ和硬泡标准场Ｈ＇０处畴长Ｌ随温度的变化关系，证明了第Ⅱ类哑铃畴畴壁中垂直布洛赫线间平衡间距Ｓｅｑ随温度的升高而增大。
补充资料：布赫纳反应
分子式：
CAS号：
性质：指脂肪族重氮化合物与烯类或炔类加成形成吡唑啉(或吡唑)之后，进一步分解得到氮气和环丙烷类衍生物的反应，α,β-不饱和酮类，不饱和酸的酯类及芳基取代的烯类等均可发生类似的反应。
CAS号：
性质：指脂肪族重氮化合物与烯类或炔类加成形成吡唑啉(或吡唑)之后，进一步分解得到氮气和环丙烷类衍生物的反应，α,β-不饱和酮类，不饱和酸的酯类及芳基取代的烯类等均可发生类似的反应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条