1) Bloch line memory
布洛赫线存储器
3) Bloch line
布洛赫线
1.
The stability of vertical Bloch lines(VBLs)in the second kind of dumbbell domain(IID)walls in LPE garnet bubble films subjected to an in-plane field at different temperature is studied experimentally.
实验研究了温度和面内场对液相外延石榴石磁泡薄膜内,第II类哑铃畴(IID)畴壁内垂直布洛赫线(VBL)链稳定性的影响。
2.
The influence of the magnetostatic interaction between vertical Bloch lines (VBLs) on the stability of hard domains in garnet bubble films subjected to a magnetostatic bias field is investigated.
研究石榴石磁泡膜在直流偏磁场作用下布洛赫线间的静磁作用对硬磁畴稳定性的影响。
3.
The ultra-high-density Bloch line memory (BLM) uses negative vertical-Bloch-line (VBL) pairs in the walls of hard domains as information carriers.
超高密度固态布洛赫线存储器(BLM)是以硬磁畴畴壁中垂直布洛赫线(VBLs)作为信息载体，硬磁畴畴壁中VBLs产生及其稳定性的研究对超高密度布洛赫线存储器的研制和磁畴壁物理的发展都是非常重要的。
4) the secend dumbbell domain
布洛赫线链
5) Bloch line physics
布洛赫线物理
1.
Some elementary knowledge of the Bloch line physics and the nanocomposite materials,and the corresponding studies performed at Magnetism Laboratory,Department of Physics,Hebei Normal University,were introduced.
简要介绍布洛赫线物理和纳米复合材料研究的一些基本情况以及河北师范大学物理系磁学实验室开展这两方面研究的现
6) vertical-Bloch-line chains
垂直布洛赫线
1.
Annihilation procession of vertical-Bloch-line chains in the walls of second kind of dumbbell domains produced by multi-branched-domains subjected to an in-plane field was investigated experimentally.
实验研究了面内场作用下枝状畴形成的第2类哑铃畴(IID)畴壁中垂直布洛赫线(VBL)链的解体过程。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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