1) metal-semiconductor transition temperature
金属-半导体转变温度
1.
Magnetotransport measurements showed that the metal-semiconductor transition temperature (TP) of the samples is 251K, and near Tp the giant magnetoresistance (GMR) peak vaues reach 72% and 85% under 5T and 13T magnetic field, respectively.
材料的铁磁相变温度Tc为257K，其金属－半导体转变温度Tp为251K。
2) metal-semiconductor transition temperature T P
金属半导体转变温度TP
3) semiconductor-metal transition
半导体-金属转变
4) metal-to-semiconductor transition
金属-半导体转变
5) ferromagnetic metallic to paramagnetic insulating transition
绝缘体-金属转变温度
6) metal-insulator transformation temperature
金属-绝缘体转变温度
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条