The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

Our results for Si δ-doped GaAs indicate that all the Si peaks of SIMS depth profile show asymmetric broadening and surface segregation increases with growth temperature,however,which are not influencing the diffusion of Si atoms.

We report photoluminescence studies of internal transitions of shallow Be acceptors in bulk GaAs and a series of δ-doped GaAs/AlAs multiple quantum w ell samples with well width ranging from 3 to 20nm.