1) GaAs photocathode
GaAs光阴极
1.
GaAs/AlGaAs layers,used as GaAs photocathode materials,were grown by metal organic chemical vapor deposition on GaAs substrates.
为探索砷化镓光阴极的光电灵敏度的影响因素 ,利用X射线光电子能谱、二次离子质谱和电化学方法测试和分析了国内和国外GaAs光阴极材料GaAs/AlGaAs的C ,O含量和空穴浓度分布。
2.
Electrostatic bonding method is proposed to combine GaAs photocathode materials and glass.
提出了用于GaAs光阴极粘结的静电键合方法。
2) GaAs photocathode
GaAs光电阴极
1.
Stability of GaAs photocathodes under different intensities of illumination;
GaAs光电阴极在不同强度光照下的稳定性
2.
A dedicated,computer-automated multi-information measurement system has been successfully developed,based on field bus,which is capable of on-line measuring,acquiring,saving and processing most information involved in GaAs photocathode preparation,including the pressure of the activation vacuum chamber,photocurrent of the photocathode,spectral response,current of both Cs and O sources.
研制了一套基于现场总线技术的GaAs光电阴极多信息量测试系统,该系统可在线测试和保存阴极制备过程中的大部分信息量,如激活系统的真空度、阴极光电流、光谱响应曲线、Cs源和O源电流等。
3.
A novel computer-controlled multi-function system has been developed to characterize GaAs photocathode.
利用自行研制的GaAs光电阴极多信息量测试与评估系统,比较了不同Cs、O激活方式下GaAs光电阴极的激活过程、光谱响应特性以及稳定性的差异,发现与传统的Cs源、O源交替断续激活方式相比,Cs源持续,O源断续的激活方式能获得灵敏度更高和稳定性更好的阴极,且阴极的长波响应能力也得到提高。
3) GaAs transmission photocathod
GaAs透射光阴极
4) GaAs/GaAlAs photocathode
GaAs/GaAlAs光电阴极
5) GaAs transmission photocathode
透射式GaAs光阴极
6) GaAs cathode
GaAs阴极
1.
The gas composition released from cesium source materials of GaAs cathode was analyzed with a quadrupole mass spectrometer.
运用四极质谱计对微光管GaAs阴极激活铯源材料除气时释放的残气进行分析,发现受污染铯放气成分主要是C,CO,CO2,CxHy等残气,它们是使GaAs阴极灵敏度低的主要原因。
2.
As for the GaAs cathode sensitivity decrease of the third generation LLL image intensifier, the effect of the residual gas on emission property of GaAs cathode in vacuum is analysed.
针对三代微光像增强器的GaAs阴极灵敏度下降,分析真空残气对阴极发射性能的影响。
补充资料：光阴
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