1)  low-voltage
低压化
1.
In recent years, the low-voltage ZnO varistor was rapidly developed by additive of TiO_2 to promote grain growth.
近年来,加入晶粒助长剂TiO2以实现低压化的低压ZnO压敏电阻发展迅速。
2)  low voltage
低压化成箔
3)  low pressure chemical vapor infiltration
低压化学气相渗透法
1.
5-dimension continuous silicon carbide fiber reinforced silicon carbide composites(SiC_f/SiC)on the interface with and without a pyrocarbon layer were fabricated by low pressure chemical vapor infiltration.
采用低压化学气相渗透法制备了具有和不具有热解炭界面层的2。
4)  low pressure chemical vapor deposition
低压化学气相沉积
1.
Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate by low pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.
以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
5)  low-pressure chemical vapor deposition
低压化学气相沉积
1.
Synthesize single-wall carbon namotubes by low-pressure chemical vapor deposition method;
低压化学气相沉积法制备单壁碳纳米管
2.
We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.
研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
6)  LPCVD
低压化学气相淀积
1.
Research on Polysilicon Thin Film Technics by LPCVD;
低压化学气相淀积多晶硅薄膜工艺研究
2.
MOLECULAR DYNAMICS SIMULATION OF THE THICKNESS OF POLYCRYSTALLINE Si MEMBRANE PREPARED BY LPCVD;
低压化学气相淀积多晶硅薄膜膜厚的分子动力学模拟
3.
The internal stress in silicon-nitride thin films prepared by low-pressure chemical vapor deposition(LPCVD) was studied measured by XP-2 stylus profilometer.
研究了低压化学气相淀积SiN(LPCVD)介质薄膜的内应力,采用XP-2型台阶仪测量了SiN介质薄膜的内应力,通过改变薄膜淀积时的工艺参数,观察了反应气体流量比、淀积温度、反应室压力等因素对SiN薄膜内应力的影响。
参考词条
补充资料：低压化学气相沉积
分子式：
CAS号：

性质：一种在低压下利用化学反应进行外延生长方法。其突出的优点是外延生长室为低压，此时载气流速增大，反应物质在表面的扩散系数增大，可减少反应物之间的寄生反应，以及外延生长对反应室的记忆效应，增大纵向均匀性。其压力范围一般在1.0Pa到4×104pa之间。低压外延有时是必须采用的手段，当化学反应对压力敏感，原材料蒸气压很低时，常压下不易进行反应，在低压下变得容易进行。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。