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1)  photo-induced resistance change
光致电阻变化
2)  light-induced change
光致变化
3)  photoelectrochromic
光电致变色
1.
The effects of heating temperature and thin films' thickness on photoelectrochromic were investigated.
光电致变色器件(Photoelectrochromicdevice)由染料电池和WO3电致变色薄膜电极组成。
2.
A photoelectrochromic cell is a particularly advantageous combination of the dye-sensitized solar cell and an electrochromic electrode.
光电致变色器件将染料敏化纳米晶太阳电池与电致变色电极巧妙地结合在一起,构成自供电的电致变色窗,通过对太阳光谱的智能调控达到建筑节能和装饰的效果。
3.
Thin films were obtained by dip-coating and spin-coating methods and they were then assembled into a photoelectrochromic device.
采用溶胶-凝胶法分别制备稳定的WO3和TiO2溶胶,溶胶颗粒分散不团聚,颗粒尺寸集中,并采用提拉法和旋涂法成膜,组装成光电致变色器件,研究了不同热处理温度下光电致变色器件的透过率变化。
4)  resistance variation
电阻变化
5)  OBIRCH
激光束诱导电阻值变化
1.
13 μm in early scale production,using electrical and physical failure analysis methods of OBIRCH(optical beam induced resistance change),VC(contrast voltage),SEM and FIB,it was conformed that the MOS device physics defect caused by ion implantation deviation is the main reason for IDDQ failure.
13μm某种DSP芯片在量产初期所遇到的IDDQ测试失效情况,利用激光束诱导电阻值变化(OBIRCH)、电压对比(VC)、扫描电镜(SEM)和聚焦离子束(FIB)等电学与物理失效分析方法,确定由离子注入偏差所引起的MOS器件物理缺陷是造成IDDQ失效的原因,据此进行了离子注入光阻的工艺改进,最终实现了成品率的提升。
6)  electrochromic window
电致变色光窗
1.
A novel ausolid-state electrochromic window was prepared by using WO3 as electrochromic layer,NiOx as counter-electrode layer and oxymethylene-linked polyoxyethylene/LiClO4 complex with good transparency as electrolyte.
以WO3为电致变色层、NiOx为离子贮存层、具有较好透光性的氧亚甲基连接聚氧乙烯/LiClO4,配合物为电解质制备了全固态电致变色光窗。
补充资料:光致致
1.有光泽而细腻貌。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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