1) Photo-negative Resistance
光致负阻
1.
Based upon these preliminary analysises, A basic photo-negative resistance physical model is proposed for the first time which is attributed to the interaction of a lateral PNPN four-fold structure and a vertical NPN bipolar transistor.
系统地报道和探讨了在研究间接耦合光电探测结构光致负阻特性中所发现的一系列实验现象。
2) solarized image
光致负感像
3) photodetachment of negative ions
负离子光致脱附
4) photo-induced resistance change
光致电阻变化
5) liquid photoimagable solder mask (LPSM)
液体光致阻焊剂
6) photo electronic negative resistance device
光电负阻器件
补充资料:光致致
1.有光泽而细腻貌。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条