1) Directed vapor deposition
直接气相沉积
2) vapor deposition
气相沉积
1.
Fabricating ceramic hard thin films by vapor deposition techniques;
气相沉积技术制备TiN类硬质膜
2.
The fabrication of TiO_2 nanotubules in porous anodic aluminum template with vapor deposition;
利用气相沉积法在模板中制备TiO_2纳米管的研究
3.
Synthesis of monodisperse Cu nano-particle template by vapor deposition
气相沉积法制备单分散Cu纳米颗粒模板
3) vapor deposit
气相沉积
1.
Organic silicon were deposited on silicon surface by chemical vapor deposition(CVD).
通过化学气相沉积的方法,在具有规则微形貌的硅片表面沉积硅的有机物制备出了超疏水表面,进而对表面的润湿性进行了对比。
4) chemical vapor deposition
气相沉积
1.
Ball-like diamond deposited on the chromized layer,P-Si(100) and Al2O3 substrates has been investigated using the hot-filament chemical vapor deposition equipment.
用热丝化学气相沉积设备研究了钢渗铬层、P-Si(100)基片和三氧化二铝基底表面形成的球形金刚石。
2.
Ti/HMS samples were prepared by hydrothermal synthesis(HTS)and chemical vapor deposition(CVD)methods and then silylated by trimethylchlorosilane(TMCS)and hexamethyldisilazane(HMDSZ)in a vapor phase.
分别用水热法和气相沉积法制备了Ti/HMS分子筛,采用三甲基氯硅烷(TMCS)和六甲基二硅氮烷(HMDSZ)对Ti/HMS样品进行了气相硅烷化,并用X射线衍射、N2吸附、红外光谱、29Si核磁共振和紫外-可见光谱对样品进行了表征。
3.
The MoW alloy film with nano-structure has been prepared on Al_2O_3 ceramic substrate using Metal Organic Chemical Vapor Deposition of Mo(CO)_6 and W(CO)_6.
利用羰基金属气相沉积方法,在Al2O3陶瓷基片上,以Mo(CO)6+W(CO)6为源,制备了MoW纳米合金晶膜。
5) PVD
气相沉积
1.
Tribological Behavior of TiN Coatings Prepared by PVD Reactive Deposition;
TiN气相沉积涂层的摩擦磨损性能研究
6) CVD
气相沉积
1.
Fluorides CVD Methode for Tungsten Films;
氟化物气相沉积制备钨涂层
2.
Carbon/carbon fibres (C/CF) performbars were prepared by the resin carbonation and carbon CVD.
采用树脂碳化和碳气相沉积相结合的方法制备了碳/碳纤维(C/CF)先驱丝,用压力浸渗凝固成形方法制备了碳/碳纤维/铜(C/CF/Cu)复合材料,借助于扫描电镜下复合材料界面和相分布观察,以及显微硬度和滑动摩擦磨损测试,探讨了基体碳(树脂碳化碳和沉积碳)对C/CF/Cu复合材料成形、显微硬度及摩擦磨损的影响。
3.
SiC thin films of large area were prepared successfully in a plasma-enchanced CVD reactor at room temperature, with silane and ethene used as raw materials and Ar as carrier gas.
采用射频等离子体增强的气相沉积法,以硅烷和乙烯为原料,在常温下成功的合成了碳化硅薄膜。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条