1) TDDB
经时击穿
1.
EXPERIMENTAL ANALYSIS AND PHYSICAL MODEL INVESTIGATION OF TDDB OF THIN GATE OXIDE;
薄栅氧化层经时击穿的实验分析及物理模型研究
2.
The characteristics of the TDDB(Time-dependent dielectric breakdown)under the CVS(constant voltage stress)and the gate current model of devices under V-ramp stress were studied in the 1.
4nm的n-MOSFET的击穿特性,包括V-ramp(斜坡电压)应力下器件栅电流模型和CVS(恒定电压应力)下的TDDB(经时击穿)特性,分析了电压应力下器件的失效和退化机理。
3.
The reliability of ISSG gate oxides were investigated through hotcarrier degradation and TDDB(time-dependent dielectric breakdown).
通过电荷泵测试,对工艺参数与界面态密度的关系进行了定性的分析,然后通过热载流子退化和经时击穿的测试对原位水汽生长栅介质膜的可靠性进行了研究。
2) puncture path; breakdown path
击穿路经
3) ignition delay
击穿延时
1.
Research into ignition delay for WEDM;
电火花线切割加工脉冲放电击穿延时的研究
4) TDDB
时变击穿
5) breakdown time-lag
击穿时滞
6) gap breakdown delay
击穿时延
1.
When switch gap pressure and voltage range of the input pulse are constant,the shorter the input pulse rise time,the shorter the gap breakdown delay and the higher the breakdown voltage.
在开关气压和输入脉冲幅度不变时,输入脉冲上升沿越快,开关的击穿时延越小,击穿电压越高。
补充资料：经时
1.历久。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条