1) TiO_2 seeding layer
TiO_2种子层
1.
85)Ti_3O_(12)(BNT)thin films with and without a TiO_2 seeding layer were fabricated on Pt/Ti/SiO_2/Si substrates by sol-gel method at 750℃.
用sol-gel法分别制备了直接沉积在Pt/Ti/SiO_2/Si衬底上和加入了TiO_2种子层的Bi_(3。
2) PT seedings
PT种子层
1.
The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated.
以乙酸铅(Pb(CH3COO)2·3H2O)、钛酸四丁酯(Ti(OC4H9)4)、硝酸锆(Zr(NO3)4·5H2O)替代锆醇盐为原料,通过在Pt/Ti/siO2/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr0。
3) Ta seed layer
Ta种子层
1.
Effects of the thickness and deposition rate of Ta seed layer on the anisotropic mag-netoresistance and coercivity of Ta/Ni_(65)Co_(35) bilayers;
Ta种子层厚度及溅射速率对Ta/Ni_(65)Co_(35)双层膜各向异性磁电阻和矫顽力的影响
2.
The effects of the thickness and deposition rate of Ta seed layer on anisotropic magnetoresistance (AMR) and coercivity of Ni_(65)Co_(35) (40 nm) layer were investigated.
用直流磁控溅射方法制备了Ta(x nm)/Ni_(65)Co_(35)(40 nm)双层薄膜(x=0,1,2,3,4,5 nm),研究了Ta种子层不同制备工艺条件对Ni_(65)Co_(35)(40 nm)薄膜的各向异性磁电阻(AMR)和矫顽力的影响；通过X射线衍射(XRD)对Ni_(65)Co_(35)薄膜的微结构进行了分析。
4) seed layer
种子层
1.
Effects of seed layers on the anisotropic magnetoresistance of NiCo films;
种子层对NiCo薄膜各向异性磁电阻效应的影响
2.
The influence of (Ni_(0.81)Fe_(0.19))_(1-x)Cr_x seed layer on the exchange bias of NiFe/FeMn bilayers;
(Ni_(0.81)Fe_(0.19))_(1-x)Cr_x作为种子层对NiFe/FeMn交换偏置的影响
3.
Using SU-8 based UV-LIGA and overcoming difficulties in overlap of multiple layers, difficulties in seed layer technology as well as difficulties in surface activation, we fabricated a 3-dimension and 5-layer structure.
本研究采用SU 8胶准LIGA技术,解决了多层套刻、种子层和表面活化等技术难题,加工出了三维五层一体化复杂结构。
5) new seed layer
新种子层
1.
Effects of the seed layer thicknesses on zero field resistivity and AMR in permalloy films with new seed layer NiFeNb;
种子层厚度对以NiFeNb为新种子层的坡莫合金薄膜的零场电阻率和AMR的影响
2.
Zero field resistivity of nanometer permalloy films with new seed layer NiFeNb;
以NiFeNb为新种子层的纳米级坡莫合金薄膜的零场电阻率
3.
The ternary NiFeNb is used as the new seed layer and the films(Ni_(82)Fe_(18))_((1-x))Nb_(x )(35)/Ni_(82)Fe_(18)(150)/Ta(30) with different Nb atom concentrations (x) are prepared with a direct current magnetron sputtering system.
以NiFeNb为新种子层,采用直流磁控溅射法制备了(Ni82Fe18)(1-x)Nbx(35 )/Ni82Fe18(150 )/Ta(30 )纳米级坡莫合金系列膜。
补充资料：种子生现行现行薰种子
【种子生现行现行薰种子】
（术语）在色者二缘和合，在心者四缘和合时，阿赖耶识所持之种子，生现行。是本有种子生果之功能也。此谓之种子生现行。其现行之法，必随所应而薰种子，其薰之种子，即新薰种子也。此谓之现行薰种子。应知此时有三法，成二重之因果。三法者：一为能生之种子，二为所生之现行，三为所薰之种子。二重之因果者：一为种子生现行，二为现行薰种子。此三法同时成二重之因果。以所生之现行，即薰种子故也。此谓之种子生现行现行薰种子。又曰三法展转因果同时。就八识而论，则第八识所持之种子为因，生眼等之七转识，同时七转识之现行法为因，生第八识之种子。因而谓之七转第八互为因果。本宗因果之谈于此为极。
（术语）在色者二缘和合，在心者四缘和合时，阿赖耶识所持之种子，生现行。是本有种子生果之功能也。此谓之种子生现行。其现行之法，必随所应而薰种子，其薰之种子，即新薰种子也。此谓之现行薰种子。应知此时有三法，成二重之因果。三法者：一为能生之种子，二为所生之现行，三为所薰之种子。二重之因果者：一为种子生现行，二为现行薰种子。此三法同时成二重之因果。以所生之现行，即薰种子故也。此谓之种子生现行现行薰种子。又曰三法展转因果同时。就八识而论，则第八识所持之种子为因，生眼等之七转识，同时七转识之现行法为因，生第八识之种子。因而谓之七转第八互为因果。本宗因果之谈于此为极。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条