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1)  TiO2 seeding layers
TiO2种子层
1.
Thickness of TiO2 seeding layers was evaluated by glancing-incidence X-ray analysis(GIXA).
975O3(PLCT)热释电薄膜,通过广角X射线衍射(XRD)研究了薄膜的相组成,利用X射线镜面反射表征TiO2种子层的厚度,通过X射线衍射及ω扫描研究了TiO2种子层对薄膜晶体学织构及其弥散程度的影响。
2)  PT seedings
PT种子层
1.
The effect of the prepared PZT thin films with PT seedings on the microstructure and electrical properties were investigated.
以乙酸铅(Pb(CH3COO)2·3H2O)、钛酸四丁酯(Ti(OC4H9)4)、硝酸锆(Zr(NO3)4·5H2O)替代锆醇盐为原料,通过在Pt/Ti/siO2/si基片与PZT薄膜之间引入PT种子层,采用改进的sol-gel工艺制备出无裂纹,致密性好,晶粒尺寸小且分布均匀的单一钙钛矿结构的Pb(Zr0。
3)  TiO_2 seeding layer
TiO_2种子层
1.
85)Ti_3O_(12)(BNT)thin films with and without a TiO_2 seeding layer were fabricated on Pt/Ti/SiO_2/Si substrates by sol-gel method at 750℃.
用sol-gel法分别制备了直接沉积在Pt/Ti/SiO_2/Si衬底上和加入了TiO_2种子层的Bi_(3。
4)  Ta seed layer
Ta种子层
1.
Effects of the thickness and deposition rate of Ta seed layer on the anisotropic mag-netoresistance and coercivity of Ta/Ni_(65)Co_(35) bilayers;
Ta种子层厚度及溅射速率对Ta/Ni_(65)Co_(35)双层膜各向异性磁电阻和矫顽力的影响
2.
The effects of the thickness and deposition rate of Ta seed layer on anisotropic magnetoresistance (AMR) and coercivity of Ni_(65)Co_(35) (40 nm) layer were investigated.
用直流磁控溅射方法制备了Ta(x nm)/Ni_(65)Co_(35)(40 nm)双层薄膜(x=0,1,2,3,4,5 nm),研究了Ta种子层不同制备工艺条件对Ni_(65)Co_(35)(40 nm)薄膜的各向异性磁电阻(AMR)和矫顽力的影响;通过X射线衍射(XRD)对Ni_(65)Co_(35)薄膜的微结构进行了分析。
5)  seed layer
种子层
1.
Effects of seed layers on the anisotropic magnetoresistance of NiCo films;
种子层对NiCo薄膜各向异性磁电阻效应的影响
2.
The influence of (Ni_(0.81)Fe_(0.19))_(1-x)Cr_x seed layer on the exchange bias of NiFe/FeMn bilayers;
(Ni_(0.81)Fe_(0.19))_(1-x)Cr_x作为种子层对NiFe/FeMn交换偏置的影响
3.
Using SU-8 based UV-LIGA and overcoming difficulties in overlap of multiple layers, difficulties in seed layer technology as well as difficulties in surface activation, we fabricated a 3-dimension and 5-layer structure.
本研究采用SU 8胶准LIGA技术,解决了多层套刻、种子层和表面活化等技术难题,加工出了三维五层一体化复杂结构。
6)  new seed layer
新种子层
1.
Effects of the seed layer thicknesses on zero field resistivity and AMR in permalloy films with new seed layer NiFeNb;
种子层厚度对以NiFeNb为新种子层的坡莫合金薄膜的零场电阻率和AMR的影响
2.
Zero field resistivity of nanometer permalloy films with new seed layer NiFeNb;
以NiFeNb为新种子层的纳米级坡莫合金薄膜的零场电阻率
3.
The ternary NiFeNb is used as the new seed layer and the films(Ni_(82)Fe_(18))_((1-x))Nb_(x )(35)/Ni_(82)Fe_(18)(150)/Ta(30) with different Nb atom concentrations (x) are prepared with a direct current magnetron sputtering system.
以NiFeNb为新种子层,采用直流磁控溅射法制备了(Ni82Fe18)(1-x)Nbx(35 )/Ni82Fe18(150 )/Ta(30 )纳米级坡莫合金系列膜。
补充资料:Tio2

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