Influence of Temperature of Carbonization Gas Introduction on the Growth of 3C-SiC films;

Study on the wear-resistance SiC films prepared by magnetron sputtering on steel;

Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method;

The retarding effects of SiC films on tritium permeation

Polysilynes, a new kind of high-performance materials, are reviewed on the present investigation of their synthesis, structure, reactions and applications as semiconductors, conductive SiC thin films, optical waveguides and photoresists.

Application of sputtering technology in the SiC film preparation;

Effects of annealing temperature on surface morphology and structure of SiC film

Mn-doped SiC films were grown by radio frequency magnetron sputtering on silicon substrate.

Heteroepitaxial growth and characterization of 6H-SiC films on C-plane sapphire substrates using LPCVD;