1) 4H-SiC film
4H-SiC薄膜
1.
The 4H-SiC films heteroepitaxially deposited on AlN/Si (111) substrates by chemical vapor deposition (CVD) are investigated in this work.
利用化学气相淀积(CVD)的方法在AlN/Si(111)复合衬底上成功实现了4H-SiC薄膜的异质外延生长,用X射线衍射(XRD)、扫描电子显微镜(SEM)、阴极荧光(CL)等方法对所得样品的结构特征、表面形貌和光学性质进行了表征测量。
2) H-SiC
4H-SiC
1.
Fabrication of AlGaN/GaN HEMT Grown on 4H-SiC;
4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制
2.
Fabrication of 4H-SiC Buried-Channel nMOSFETs;
4H-SiC埋沟MOSFET的研制(英文)
3.
Second-Order Raman Scattering from n- and p-Type 4H-SiC;
n型和p型4H-SiC的二级喇曼谱(英文)
3) SiC films
SiC薄膜
1.
Study on the wear-resistance SiC films prepared by magnetron sputtering on steel;
钢基耐磨SiC薄膜制备研究
2.
Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method;
射频溅射法制备3C-SiC和4H-SiC薄膜
3.
The retarding effects of SiC films on tritium permeation
SiC薄膜的阻氚性能研究
4) SiC thin film
SiC薄膜
1.
Polysilynes, a new kind of high-performance materials, are reviewed on the present investigation of their synthesis, structure, reactions and applications as semiconductors, conductive SiC thin films, optical waveguides and photoresists.
本文综述了一类新型的高功能材料——聚硅炔的合成、结构、反应以及作为半导体、导电性SiC薄膜、光学波导器和光致抗蚀剂的应用的研究现状。
5) SiC film
SiC薄膜
1.
Application of sputtering technology in the SiC film preparation;
溅射技术在制备SiC薄膜中的应用
2.
Effects of annealing temperature on surface morphology and structure of SiC film
退火温度对SiC薄膜表面形貌和结构的影响
3.
Mn-doped SiC films were grown by radio frequency magnetron sputtering on silicon substrate.
采用射频磁控溅射的方法在Si衬底上制备了掺Mn的SiC薄膜,用X射线衍射、傅里叶变换红外光谱、扫描电镜及荧光光谱等方法,对薄膜的结构、表面形貌、化学键状态和光学性能进行了研究。
6) 6H-SiC films
6H-SiC薄膜
1.
Heteroepitaxial growth and characterization of 6H-SiC films on C-plane sapphire substrates using LPCVD;
C面蓝宝石衬底上6H-SiC薄膜的低压化学气相外延生长与表征
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条