1) Four-probe method
四探针法
1.
The four-probe method has been used to measure the magnetoresistance effect of this system in different magnetic fields.
利用磁控溅射制备了不同非磁性层厚度的Fe/Cr多层磁性薄膜系统,利用四探针法测定了该多层膜系统在不同磁场下磁电阻效应,用饱和场法给予佐证,溅射制备的多层膜系统饱和场明显地随Cr层厚度增加而衰减振荡,得出了Fe/Cr多层膜的铁磁反铁磁耦合的交换耦合强度随非磁性层厚度变化的物理规律。
2.
The electric and semiconductor properties were studied by four-probe method, and the results show that the Cu3N thin films are n-type semiconductor.
运用四探针法测量了薄膜的电学和半导体特性,证明了实验制备得到的Cu3N薄膜是一种n型半导体,禁带宽度约为1。
2) Four-point probe method
四探针法
1.
The effect of geometry size for measuring the resistance of amorphous film alloy with the four-point probe and two-four-point probe methods is studied A new method for measuring the resistance of amorphous narrow film alloy with high precision is introduced.
研究了四探针和双四探针法测量非晶态薄膜合金电阻的几何尺寸效应，提出了一种高精度测量非晶态窄带薄膜合金电阻的新方法，理论和实验的研究结果都证明了这种方法的可行性。
3) Four Probes Method
四探针方法
4) the four-point probe measurement
四探针测量法
1.
This paper uses the four-point probe measurement to test the variation of voltage on Sn3.
对无铅互连凸点的电迁移失效过程和四探针测量法的测量误差进行了分析,提出了采用四凸点结构提高测量精度的改进措施。
5) four-point probe
四探针
1.
To adapt demands of the advance for semiconductor production technology,a kind of microcontroller circuit to measure the resistance of wafers was exploited by an improved Rymaszewski Method of four-point probe.
为了适应半导体生产工艺发展的要求,我们开发了一种利用改进的Rymaszewski法进行四探针硅片电阻率测量的单片机电路。
2.
The four-point probe technology is also faced with more severe challenge simultaneously.
四探针技术是测量半导体电阻率的专用测量手段,已经有几十年的历史。
6) four point probe
四探针
1.
Resistivity and relevant impurity concentration in every layer is measured with four point probe method.
利用阳极氧化法对半导体材料逐次去层 ,采用四探针法测量其每层的电阻率及相应杂质浓度 ,可得出半导体材料的杂质分布 N (x) 。
2.
The finite element method(FEM) is employed to calculate potential distributions of two dimensional current fields in semiconductor sheet resistance measurements using a four point probe and the model of calculation is presented, which has been tested and proved by calculating the potential distribution of several measurement shaped samples.
对四探针测试半导体薄层电阻中二维电流场的电势分布采用有限元法（ＦＥＭ）数值计算，并提出了计算模型。
补充资料：电子探针(见电子探针显微分析)
电子探针(见电子探针显微分析)
electron probe
气二J一，不f丁electron orobom由不，‘.，*二
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条