The resistivity of polished silicon wafers can be reduced by reducing the surface recombination and increasing the measuring current intentionally during the measurement of resistivity with a collinear four probe array.

The four-probe method has been used to measure the magnetoresistance effect of this system in different magnetic fields.

The electric and semiconductor properties were studied by four-probe method, and the results show that the Cu3N thin films are n-type semiconductor.

To adapt demands of the advance for semiconductor production technology,a kind of microcontroller circuit to measure the resistance of wafers was exploited by an improved Rymaszewski Method of four-point probe.

The four-point probe technology is also faced with more severe challenge simultaneously.

Resistivity and relevant impurity concentration in every layer is measured with four point probe method.

The finite element method(FEM) is employed to calculate potential distributions of two dimensional current fields in semiconductor sheet resistance measurements using a four point probe and the model of calculation is presented, which has been tested and proved by calculating the potential distribution of several measurement shaped samples.

The effect of geometry size for measuring the resistance of amorphous film alloy with the four-point probe and two-four-point probe methods is studied A new method for measuring the resistance of amorphous narrow film alloy with high precision is introduced.