1) LEC-InP crystal
LEC-InP晶体
2) InP crystal
InP 晶体
1.
The GaAs and InP crystals as compound semiconductors are the basic microelectronics and photoelectron materials.
采用有限单元法数值求解了LEC 法生长GaAs、InP 晶体以及LEFZ 法生长GaAs晶体中的热应力。
3) indium phosphide (inp)
磷化铟晶体INP
4) lens epithelial cells (LEC-B3)
晶状体上皮细胞(LEC-B3)
5) InP double heterojunction bipolar transistor
InP双异质结双极晶体管
1.
A physical model of small-signal InP double heterojunction bipolar transistor(DHBT) is developed,which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances C_mb and C_mc.
研究了InP双异质结双极晶体管(DHBT)的能带结构对集电极电容的影响,解决了传统方法不能准确提取InPDHBT集电极电容的问题。
补充资料:磷化铟晶体INP
CAS:22398-80-7
中文名称:磷化铟;磷化铟晶体INP
英文名称:indium phosphide;indium monophosphide;indium phosphide (inp)
中文名称:磷化铟;磷化铟晶体INP
英文名称:indium phosphide;indium monophosphide;indium phosphide (inp)
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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