1) electric breakdown strength
电击穿场强
1.
We studied the fractured morphology,aggregate structure,thermal stability,mechanical property and electric breakdown strength of hybrid films.
用不同用量硅烷偶联剂处理纳米Al2O3粉体,并借助超声波以一定方式将其均匀分散于聚酰胺酸溶液中,制备出不同偶联剂用量的PI/纳米Al2O3杂化薄膜,并对该杂化薄膜的断面形貌、聚集态结构、热稳定性、力学性能、电击穿场强进行表征测试分析。
2.
In this paper, electric breakdown strength of solid dielectric thin films is discussed theoretically, and the existing measure methods and the data obtained by numerous r.
它们的电击穿场强是一个特殊的特性参数。
3.
Silicon oxide films were prepared by RF magnetron reactive sputtering on a monocrystalline silicon wafer;and the composition and influence of the preparation process on the surface morphology and electric breakdown strength were studied.
采用射频磁控反应溅射法在单晶硅片上制备了氧化硅(SiOx)薄膜,分析了薄膜的主要成分,研究了制备工艺对薄膜表面形貌和电击穿场强的影响。
2) Brokendown electric field intensity
击穿电场强度
5) breakdown electric field
击穿电场
1.
It is found that the sample with x(MnCO3) 008% presents the highest nonlinear coefficient(α=82),the highest potential barrier height(φB=111 eV),and the highest breakdown electric field (E10=4668 V/mm).
11eV),最高的击穿电场(E=466。
6) peak field
击穿峰值电场强度
1.
Based on a new semi empirical analytical method, namely equivalent doping transformation, the breakdown voltage and the peak field of the epitaxial diffused punch through junction have been obtained.
基于等价掺杂转换理论的应用 ,得到了解析计算扩散 -外延穿通 P- N结击穿电压和击穿峰值电场强度的一系列结果 。
补充资料：液体电介质电击穿
液体电介质电击穿
breakdown in dielectric liquids
丫e们d{0川旧7日妇ch日on液体电介质击穿(b reakdownindielectricliquids)在电场作用下，液体电介质由绝缘状态突变为良导电状态的过程。 液体电介质击穿过程的试验研究还不很充分，全面描述液体电介质击穿的理论尚未形成。对于纯净的液体电介质，存在两种用来解释击穿过程的理论—电击穿理论(见液体电介质电击穿)和气泡击穿理论(见液休电介质气泡击穿)。对于或多或少含有水分、纤维等杂质的工程用液体电介质的击穿过程，可用小桥击穿理论(见液体电介质小桥击穿)解释二
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条