1) background current
本底电流
1.
This article discussed the factors that affect the background current of ECD (electronic capture detector)and the causes of the excessively cleanliness phenomena Furthermore, we provide our solution of this proble
讨论了影响 ECD(电子俘获检测器 )本底电流的因素和 ECD过洁故障产生的机理 ,提出了排除故障的方
2) pedestal voltage
本底电平
1.
A method of the compensation of pedestal voltage for pyroelectric vidicon with a microcomputer is pro-posed.
给出一种运用微机技术对红外热释电摄像管（ＰＥＶ）的本底电平进行补偿的方法，讨论了测温精度与距离、大气湿度和平移速度之间的关系。
3) substrate current
衬底电流
1.
Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors;
高压双扩散漏端MOS晶体管双峰衬底电流的形成机理及其影响
2.
Modification of MOSFET s Substrate Current Model in Deep Submicrometer Regime;
MOSFET衬底电流模型在深亚微米尺寸下的修正
3.
As a monitor of hot-carrier-injection reliability,the substrate current(ISUB)usually increases in high voltage transistors,but has only one peak in standard low voltage transistors.
基于泊松方程和幸运电子模型,推出了适用于高压n型器件衬底电流(ISUB)的公式,并且为模拟和实验测量的结果所验证。
4) background electrolyte
本底电解质
5) background conductivity
本底电导率
6) base flow
底流基本水流
补充资料：标准冲击电流波形(见冲击电流发生器)
标准冲击电流波形(见冲击电流发生器)
standard impulse current wave form
blaozhun ehonglld}0n4一u box]ng标准冲击电流波形(standard impulse currentwave form)见冲击电流发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条