1) oxygen vacancy
氧缺位
1.
With the method of applying bending vibration to ceramic BaTiO_3, a relaxation internal friction peak due to oxygen vacancy and another internal friction peak accompanied by a modulus minimum due to the second order phase transformation are readily observed, but have not been found by applying the conventional torsional method.
用弯曲振动法观测到BaTiO3陶瓷中用扭转振动法观测不到的氧缺位导致的弛豫内耗峰及二级相变时的内耗峰和模量极小。
2.
The oxygen vacancy concentration is increased by doping Pr in Ce0.
9具有氧缺位的立方萤石结构,Pr离子的掺杂有利于氧缺位增加。
3) oxygen vacancy
氧空位缺陷
1.
After nano-TiO_2 were heat treated in N2 atmosphere, the existence of oxygen vacancy and the red shift of light absorption boundary wavelength for these samples were found in this paper.
在N2气氛中对纳米TiO2粉末进行热处理改性研究发现,氮气热处理改性后的样品中存在氧空位缺陷,使纳米TiO2的光吸收阈值红移。
4) oxygen-deficient Fe3O4-δ
氧缺位Fe3O4-δ
1.
The oxygen-deficient Fe3O4-δ was prepared by reducing the natural magnetite powder at the different temperatures using CO as reduction agent,and its catalytic activity was tested by decomposing SО2 into S(0).
研究在不同温度下以CO还原天然磁铁矿制备氧缺位Fe3O4-δ的过程,并考察了其分解SO2成S的能力。
5) oxygen deficient nickel ferrite
氧缺位铁酸镍
6) hypoxic injury potential
缺氧损伤电位
1.
The appearance time of attenuation and disappearance time of PS,the appearance of hypoxic injury potential and the .
方法大鼠离体海马脑片以人工脑脊液孵育,观察缺氧后海马CA1区诱发群峰电位(population spike,PS)开始减小的时间和消失时间,缺氧损伤电位(hypoxic injury potential,HIP)出现时间、出现率和保持时间,复氧后PS的恢复率和恢复程度等指标并观察L-THP对这些指标的影响。
2.
Results The hypoxic injury potential (HIP) appeared in the slices during simulated ischemia in the control group, and the OPS recovered to certain.
结果 使用人参皂甙Rb1(6 0 0 μmol/L)后 ,可使缺氧损伤电位 (hypoxicinjurypotential,HIP)发生率明显减少 (P <0 。
补充资料:氧离子缺位浓度
分子式:
CAS号:
性质:离子晶体中由于下列情况产生氧离子缺位。(1)不等价置换,为保持电中性,产生组分缺陷。(2)由于热振动产生热缺陷。(3)出现非化学计量化合物。单位体积中氧离子缺位数与该体积中所有氧离子结点数的比值称为氧离子缺位浓度。陶瓷材料中氧离子缺位浓度对电性能影响很大,某些高温导电陶瓷如氧化锆固溶体等就是利用氧离子缺位进行导电的。氧离子缺位浓度提高,材料活性提高,有助于质点迁移,可使固相反应和烧结温度降低。
CAS号:
性质:离子晶体中由于下列情况产生氧离子缺位。(1)不等价置换,为保持电中性,产生组分缺陷。(2)由于热振动产生热缺陷。(3)出现非化学计量化合物。单位体积中氧离子缺位数与该体积中所有氧离子结点数的比值称为氧离子缺位浓度。陶瓷材料中氧离子缺位浓度对电性能影响很大,某些高温导电陶瓷如氧化锆固溶体等就是利用氧离子缺位进行导电的。氧离子缺位浓度提高,材料活性提高,有助于质点迁移,可使固相反应和烧结温度降低。
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