1) un relaxed oxygen deficient center
非弛豫氧空位缺陷态
2) oxygen vacancy
氧空位缺陷
1.
After nano-TiO_2 were heat treated in N2 atmosphere, the existence of oxygen vacancy and the red shift of light absorption boundary wavelength for these samples were found in this paper.
在N2气氛中对纳米TiO2粉末进行热处理改性研究发现,氮气热处理改性后的样品中存在氧空位缺陷,使纳米TiO2的光吸收阈值红移。
4) non-equilibrium relaxation
非平衡态弛豫
5) vacancy defect
空位缺陷
1.
Effect of three kinds of Fe vacancy defects on magnetic and electric properties of Fe_3F_4 is calculated by using the first principal potentials.
采用第一性原理赝势法计算了3种Fe空位缺陷对Fe3F4磁电性能(能态密度、电荷分布、分子磁矩等)的影响,并利用配位场理论分析了3种空位缺陷影响Fe3F4磁电性能的微观机理。
2.
To investigate the dislocation motion characteristics in low-temperature(LT) buffer during the growing process of lattice mismatched heterostructure,a 60° dislocation dipole and 5 types of ring-shaped hexagonal vacancy defects with their different relative positions to the dislocation are modeled in a Si crystal via molecular dynamics simulation.
为了研究晶格常数不匹配的异质结结构(Si1-xGex/Si)在生长过程中低温缓冲层内的位错运动特性,在Si晶体中建立了60°位错偶极子,以及相对于位错不同空间位置的5种六边形环状空位缺陷模型。
3.
In addition,how the motion of screw dislocation is affected by a vacancy defect is investigated.
在此基础上进一步研究晶体内的空位缺陷对螺位错运动的影响。
6) Vacancy defects
空位缺陷
1.
Blue emission from Si vacancy defects in Si nanostructures;
硅纳米结构中硅空位缺陷引发的双峰蓝光发射
2.
By performing first-principles electronic structure and transport calculations, we have demonstrated the electronic structure and transport properties of single layer zigzag graphene nanoribbons with armchair edges and the effect of edge-vacancy defects.
采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair边缘)的电子结构和输运性质及其边缘空位缺陷效应。
3.
The ferromagnetism of carbon nanotube with vacancy defects is investigated with the Hubbard model.
利用Hubbard模型,采用数值计算的方法研究了空位缺陷附近的碳原子间的跳跃积分(t2)和在位库仑相互作用(U)对碳纳米管的铁磁基态的影响。
补充资料：空位缺陷
分子式：
CAS号：
性质：晶体中的原子或离子离开格位后所留下的空格位称做空位缺陷，用V(vacancy的字首)表示空位缺陷。如氟化钙(CaF2)中氟离子空位表示成VF·，V表示是空位缺陷，右下角的符号F表示空位缺陷位于氟离子格位，右上角符号表示空位缺陷带有一个正有效电荷。
CAS号：
性质：晶体中的原子或离子离开格位后所留下的空格位称做空位缺陷，用V(vacancy的字首)表示空位缺陷。如氟化钙(CaF2)中氟离子空位表示成VF·，V表示是空位缺陷，右下角的符号F表示空位缺陷位于氟离子格位，右上角符号表示空位缺陷带有一个正有效电荷。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条