Development of Ion-implantation Research in Gallium Nitride Material;

Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride;

Based on Chin’s theory,which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges (1016~1020cm-3) at room temperature,an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained.

Analytical calculation of temperature distribution and thermal deformation during doping of Zn in GaN/Al_2O_3 material induced by nanosecond pulse-width laser;

Application of Wet Chemical Etching in GaN-based Materials;

GaN-based 512×1 Ultroviolet linear Focal Plane Arrays

Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition

GaN nanorods were successfully synthesized through the reaction of Ga2O3 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process.

GaN nanorods were grown by metal organic chemical vapor deposition(MOCVD)with Ni(NO3)2 as the catalyst precursor and trimethyl gallium and high purity blue ammonia as the Ga and N sources,respectively,on Si(111)substrates.

Instantaneous relaxation of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE;

A new method to grow high quality GaN film by MOCVD;

GaN films have been grown by LP-MOCVD on the sapphire substrate,which a half of it is treated by chemical etch.