1) grain boundary electric conduction
晶界导电
2) Grain boundary conductivity
晶界电导率
3) bulk conductivity and grain boundary conductivity
晶粒电导和晶界电导
4) Grain boundary conduction
晶界传导
5) grain boundary resistance
晶界电阻
1.
3 MnO3 in the experiment, this paperestablishes an ideal pattern and discusses grain boundary resistance and the role it plays, obtaining theconclusion that grain boundary resistance has a rapid increase as the particle size decreases, which isrelevent to boundary thickness of nane particle and particle size proportion.
３ＭｎＯ３纳米固体电阻行为，建议了一种理想模型，讨论了晶体电阻和晶界电阻所起的作用，得到了晶界电阻随粒径减小而迅速增加，且与纳米粒子的界面层厚度和粒径比相关的结论。
6) grain boundary layer semiconductor ceramic capacitor
晶界层半导体陶瓷电容器
1.
The grain boundary layer semiconductor ceramic capacitors were manufactured by one-time sintering technology.
采用一次性烧成技术研制了晶界层半导体陶瓷电容器,在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂,两者在还原烧成时促使晶粒生长并半导化,助烧剂在氧化时有利于晶界绝缘层形成。
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条