1) heavily Sb-doped silicon
重掺锑硅单晶
1.
Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-doped silicon wafers was investigated.
对大直径重掺锑硅单晶中流动图形缺陷(FPDs)进行了研究。
2) heavily As doped silicon crystal
重掺砷单晶硅
3) heavily doped CZSi
重掺杂硅单晶
4) Heavily As-doped silicon
重掺砷硅单晶
1.
Heavily As-doped silicon substrates are adopted by many device manufactories because of higher As-doping density.
重掺砷硅衬底片正日益受到器件厂家的青睐，所以研究重掺砷硅单晶中的氧沉淀及诱生缺陷对实现重掺衬底的内吸除有重大意义。
5) NCZ
掺氮直拉硅单晶
1.
In recent years, nitrogen-doped czochralski silicon (NCZ)has attracted intensive attention from the industrial circle and academia.
掺氮直拉硅单晶近年来引起了硅材料产业界和学术界的广泛关注。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条