1) chemical grinding
化学研磨
1.
With the common chemical grinding solution for stainless steel, the burrs cannot be eliminated, and the precise tolerance size and surface roughness cannot reach the demands, which has some bad effects on the properties of the metal parts of high-vacuum electronic devices.
普通型不锈钢化学研磨液无法消除毛刺、保证零件精密公差尺寸和表面粗糙度 ,严重影响高真空电子器件金属零件的使用性能。
2.
LiFePO4 is synthesized by chemical grinding method,and the structure and electrochemical performances are studied.
采用化学研磨法制备了磷酸铁锂,并对其结构和电化学性能进行了研究。
2) electrochemical mechanical polishing
电化学机械研磨
1.
Some new processes and technologies for electronics finishing were introduced, such as wafer plating, electrochemical mechanical polishing, microelectro-mechanical system plating, copper plating using insoluble anode, platinized niobium electrode, lead and cadmium free eleclroless nickel, recycling of alkaline etching solution and reclaiming system of copper.
介绍了电子电镀中的若干新工艺新技术,如芯片电镀、电化学机械研磨、微机电系统电镀、不溶性阳极电镀铜、镀铂铌电极以及无铅无镉中磷光亮化学镀镍、碱性蚀刻液再生和铜回收系统等。
3) Chemical Millering Polishing
化学研磨抛光
1.
Chemical Millering Polishing(CMP), which is a new technology in material surface processing area, is able to treat the interior and exterior surface of all shapes of parts, by dipping-eroding the parts into certain chemical solution.
化学研磨抛光技术作为一种新兴的材料表面处理技术,通过化学药液浸蚀方式,可以在短时间内完成对于各种复杂形状零件的内外表面研磨抛光,同时可以使工件表面满足较高的物理化学性能要求,非常适合于IC制造设备中高真空度、高洁净度要求的零部件生产加工。
5) chemical mechanical lapping
机械化学研磨
6) electrochemical milling
电化铣削;电化学研磨
补充资料：工程化学障碍物(见化学障碍物)
工程化学障碍物(见化学障碍物)
engineering-chemical obstacle
习U·上日、11匕I一9 nuQXue Zhang’aiwu工程化学障碍物(engineelsng一ehemiealobstacle)见化学障碍物。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条