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1)  bandgap ['bændɡæp]
禁带宽
1.
A thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.
由于厚膜中存在较强的表面相互作用,厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
2.
The thickness and the bandgap of TiO_2 nano films were calculated by using the UV-VIS spectra of the films.
采用反胶束法制备TiO2纳米溶胶,利用浸渍提拉方法制备TiO2薄膜,通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽的各种因素。
3.
The thickness and the bandgap of TiO2 nano films were calculated by using the UV-VIS spectra of the films.
通过对膜进行紫外可见光谱分析,探讨了影响TiO2纳米膜厚度和禁带宽度的各种因素。
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2)  The direct-band-gap energy
禁带带宽
3)  band gap
禁带宽度
1.
Measuring the band gap of silicon using silicon photocells;
利用硅光电池测量硅单晶半导体材料的禁带宽度
2.
It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0.
光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0。
3.
Based on the simulation, the best band gap and the optimal thickness of each junction were carried out.
本文对a Si∶H叠层薄膜太阳电池进行了计算机模拟,提出各层电池的禁带宽度最佳匹配以及各层电池本征层的最佳厚度的设计方案。
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4)  Bandgap ['bændɡæp]
禁带宽度
1.
Relationship Between Intrinsic Breakdown Field and Bandgap of Materials;
本征击穿电场与禁带宽度的关系
2.
Determined the bandgap of ncSi using a heterojunction CV;
电容-电压法测定纳米硅的禁带宽度
3.
Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;
pn结电容-电压法测量应变SiGe禁带宽度
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5)  Wide band gap
宽禁带
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6)  band-gap
禁带宽度
1.
The band-gaps of BN(n,0) nanotubes also increase with the increase of n and converge at 5.
BN(n ,0 )纳米管的禁带宽度随着n的增大而增大 ,并收敛于 5 。
2.
The transmission spectra of ZnS films were measured,optical constants and band-gap of ZnS films were obtained.
利用薄膜分析系统测量不同沉积时间制备的ZnS薄膜透射谱,通过分析薄膜透射谱,来确定ZnS薄膜光学常数和禁带宽度。
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补充资料：仪禁
1.礼仪的约束。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条